PartNumber | MPSH10RLRA | MPSH10G | MPSH10RLRAG |
Description | Bipolar Transistors - BJT 25V VHF/UHF NPN | Bipolar Transistors - BJT 25V VHF/UHF NPN | RF TRANS NPN 25V 650MHZ TO92-3 |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | N | Y | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-92-3 | TO-92-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 25 V | 25 V | - |
Collector Base Voltage VCBO | 30 V | 30 V | - |
Emitter Base Voltage VEBO | 3 V | 3 V | - |
Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
Gain Bandwidth Product fT | 650 MHz | 650 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Height | 5.33 mm (Max) | 5.33 mm (Max) | - |
Length | 5.2 mm (Max) | 5.2 mm (Max) | - |
Packaging | Reel | Bulk | Tape & Reel (TR) |
Width | 4.19 mm (Max) | 4.19 mm (Max) | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 60 | 60 | - |
Pd Power Dissipation | 350 W | 350 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 2000 | 5000 | - |
Subcategory | Transistors | Transistors | - |
Series | - | MPSH10 | - |
Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-92-3 |
Power Max | - | - | 350mW |
Transistor Type | - | - | NPN |
Current Collector Ic Max | - | - | - |
Voltage Collector Emitter Breakdown Max | - | - | 25V |
DC Current Gain hFE Min Ic Vce | - | - | 60 @ 4mA, 10V |
Frequency Transition | - | - | 650MHz |
Noise Figure dB Typ f | - | - | - |
Gain | - | - | - |