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| PartNumber | MJD112-1G | MJD112-1 | MJD112-1G/MJD117 |
| Description | Darlington Transistors 2A 100V Bipolar Power NPN | Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 3Pin | |
| Manufacturer | ON Semiconductor | MOTOLORA | ON/FAI |
| Product Category | Darlington Transistors | Transistors (BJT) - Single | IC Chips |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Maximum Collector Cut off Current | 20 uA | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 (DPAK) | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJD112 | - | - |
| Packaging | Tube | - | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Width | 2.38 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 200, 500, 1000 | - | - |
| Product Type | Darlington Transistors | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001411 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| MJD112-1G | Darlington Transistors 2A 100V Bipolar Power NPN | ||
| MJD112-1 | Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 3Pin | ||
| MJD112-1G/MJD117 | Nuevo y original | ||
ON Semiconductor |
MJD112-1G | Darlington Transistors 2A 100V Bipolar Power NPN |