MJD112-1G

Mfr. #:: MJD112-1G
Fabricante:: ON Semiconductor
Descripción:: Darlington Transistors 2A 100V Bipolar Power NPN
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: MJD112-1G Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MJD112-1G Datasheet MJD112-1G Datasheet (P4-P6)MJD112-1G Datasheet (P7-P9)MJD112-1G Datasheet (P10)
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: Transistores Darlington

RoHS:: Y

Configuración:: Único

Polaridad del transistor:: NPN

Voltaje colector-emisor VCEO Max:: 100 V

Emisor- Voltaje base VEBO:: 5 V

Colector- Voltaje base VCBO:: 100 V

Corriente máxima del colector de CC:: 2 A

Corriente máxima de corte del colector:: 20 uA

Pd - Disipación de energía:: 20 W

Estilo de montaje:: SMD / SMT

Paquete / Caja:: TO-252-3 (DPAK)

Temperatura mínima de funcionamiento:: - 65 C

Temperatura máxima de funcionamiento:: + 150 C

Serie:: MJD112

Embalaje:: Tubo

Altura:: 6.22 mm

Longitud:: 6.73 mm

Ancho:: 2.38 mm

Marca:: EN Semiconductor

Corriente continua del colector:: 2 A

Colector de CC / Ganancia base hfe Min:: 200, 500, 1000

Tipo de producto:: Transistores Darlington

Cantidad de paquete de fábrica:: 75

Subcategoría:: Transistores

Unidad de peso:: 0.001411 oz

Tags: MJD112-1, MJD112, MJD11, MJD1, MJD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJD112-1G Descripción

***ca Corp: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

***emi: 2.0 A, 100 V NPN Darlington Bipolar Power Transistor

***(Formerly Allied Electronics): ON Semi MJD112-1G NPN Darlington Transistor; 2 A 100 V HFE:1000; 3-Pin IPAK

***ure Electronics: MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor

***p One Stop: Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube

***th Star Micro: Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

***nell: TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto

***ark: Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD112-1G

***r Electronics: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

***emi: 2.0 A, 100 V NPN Darlington Bipolar Power Transistor

***el Electronic: RES SMD 4.99K OHM 1% 1/2W 1206

***r Electronics: Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin

***ical: Trans Darlington NPN 100V 8A 1750mW 3-Pin(3+Tab) IPAK Rail

*** Electronic Components: Darlington Transistors NPN Si Transistor Darlington

***ark: Transistor; Transistor Type:Darlington; Package/Case:3-TO-252; Termination Type:Through Hole; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Through Hole; No. of Pins:3 ;RoHS Compliant: Yes

***emi: Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

***enic: 100V 15W 2A 200@100mA5V 120MHz NPN 130mV@1A100mA +150¡Í@(Tj) IP Bipolar Transistors - BJT ROHS

*** Electronics: Bipolar Transistors - BJT BIP NPN 2A 100V

***ical: Trans GP BJT NPN 100V 2A 1000mW 3-Pin(3+Tab) IPAK Bag

Market price

Parte #	Mfg.	Descripción	Valores	Precio
MJD112-1G DISTI # V99:2348_07291868	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	24	1000:$0.2271 500:$0.2828 100:$0.2836 10:$0.4063 1:$0.4635
MJD112-1G DISTI # MJD112-1GOS-ND	ON Semiconductor	TRANS NPN DARL 100V 2A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1050:$0.2645 525:$0.3423 150:$0.4357 75:$0.5447 1:$0.6800
MJD112-1G DISTI # C1S541901229917	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	14	10:$0.3720
MJD112-1G DISTI # C1S541900465743	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	24	2475:$0.3400
MJD112-1G DISTI # C1S541900403734	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	24	10:$0.3997
MJD112-1G DISTI # MJD112-1G	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3+Tab) IPAK Rail (Alt: MJD112-1G) RoHS: Compliant Min Qty: 75	Europe - 2925	75:€0.2539 150:€0.2069 300:€0.1899 450:€0.1749 750:€0.1629
MJD112-1G DISTI # MJD112-1G	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: MJD112-1G) RoHS: Compliant Min Qty: 2475 Container: Tube	Americas - 0	2475:$0.1759 2625:$0.1749 5100:$0.1729 12375:$0.1709 24750:$0.1669
MJD112-1G DISTI # MJD112-1G	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3+Tab) IPAK Rail (Alt: MJD112-1G) RoHS: Compliant Min Qty: 2475	Asia - 0	2475:$0.2602 4950:$0.2502 7425:$0.2409 12375:$0.2323 24750:$0.2243 61875:$0.2168 123750:$0.2133
MJD112-1G DISTI # 26K4439	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: 26K4439) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$0.6500 10:$0.5360 100:$0.3270 500:$0.2900 1000:$0.2520 2500:$0.2150 10000:$0.2010
MJD112-1G DISTI # 26K4439	ON Semiconductor	DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:25MHz,Power Dissipation Pd:20W,DC Collector Current:2A,DC Current Gain hFE:12000hFE , RoHS Compliant: Yes	0	1:$0.1560 10:$0.1560 100:$0.1560 500:$0.1560 1000:$0.1560 2500:$0.1560 10000:$0.1560
MJD112-1G DISTI # 14AC4575	ON Semiconductor		343	1:$0.6500 10:$0.5360 100:$0.3270 500:$0.2900 1000:$0.2520 2500:$0.2150 10000:$0.2010
MJD112-1G DISTI # 70340232	ON Semiconductor	ON Semi MJD112-1G NPN Darlington Transistor,2 A 100 V HFE:1000,3-Pin IPAK RoHS: Compliant	0	30:$0.2400 75:$0.2300 150:$0.2200 300:$0.2000
MJD112-1G	ON Semiconductor	RoHS: Not Compliant	1286366	1000:$0.2800 500:$0.2900 100:$0.3100 25:$0.3200 1:$0.3400
MJD112G DISTI # 863-MJD112G	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant	3415	1:$0.6300 10:$0.5230 100:$0.3190 1000:$0.2470 2500:$0.2100 10000:$0.1960 25000:$0.1860
MJD112-1G DISTI # 863-MJD112-1G	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant	0	1:$0.6500 10:$0.5360 100:$0.3270 1000:$0.2520 2500:$0.2150 10000:$0.2010 25000:$0.1900
MJD112-1G	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(3+Tab) IPAK Rail RoHS: Compliant	100 In Stock	50000:$0.1810 25000:$0.1950 10000:$0.1990 2500:$0.2340 1000:$0.2440 500:$0.3060 250:$0.4860 80:$0.6600
MJD112-1G	ON Semiconductor		73
MJD112-1G DISTI # 7905315P	ON Semiconductor	NPN DARLINGTON POWER TRANS. 100V 2A IPAK, TU	780	30:£0.3490 75:£0.2970 150:£0.2450 300:£0.2250
MJD112-1G DISTI # 7905315	ON Semiconductor	NPN DARLINGTON POWER TRANS. 100V 2A IPAK, PK	75	15:£0.4020 30:£0.3490 75:£0.2970 150:£0.2450 300:£0.2250
MJD112-1G DISTI # 2727978	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, TO-251 RoHS: Compliant	348	5:£0.4640 25:£0.4300 100:£0.2490 250:£0.2210 500:£0.1930
MJD112-1G DISTI # 2727978	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, TO-251 RoHS: Compliant	343	1:$1.0300 10:$0.8490 100:$0.5180 1000:$0.3990 2500:$0.3410 10000:$0.3190 25000:$0.3010 50000:$0.2940
MJD112-1G. DISTI # 1364070	ON Semiconductor	DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3 RoHS: Compliant	0	1:$1.0300 10:$0.8490 100:$0.5180 1000:$0.3990 2500:$0.3410 10000:$0.3190 25000:$0.3010 50000:$0.2940
MJD112-1G	ON Semiconductor	Complementary Darlington Power Transistors	65	1:$0.3600 100:$0.2800 500:$0.2500 1000:$0.2400

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Disponibilidad

Valores:: Available
En orden:: 1985
Ingrese la cantidad:

El precio actual de MJD112-1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,65 US$~~; ~~0,65 US$~~

10: ~~0,54 US$~~; ~~5,36 US$~~

100: ~~0,33 US$~~; ~~32,70 US$~~

1000: ~~0,25 US$~~; ~~252,00 US$~~

2500: ~~0,22 US$~~; ~~537,50 US$~~

10000: ~~0,20 US$~~; ~~2 010,00 US$~~

25000: ~~0,19 US$~~; ~~4 750,00 US$~~

50000: ~~0,19 US$~~; ~~9 300,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

MJD112-1 3
MJD112 30
MJD11 49
MJD1 114
MJD 474

MJD112-1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes