MJB44

MJB44H11G vs MJB44H11T4G vs MJB44H11T

 
PartNumberMJB44H11GMJB44H11T4GMJB44H11T
DescriptionBipolar Transistors - BJT 8A 80V 50W NPNBipolar Transistors - BJT 8A 80V 50W NPN
ManufacturerON SemiconductorON SemiconductorON
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO5 V5 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJB44H11MJB44H11-
Height4.83 mm4.83 mm-
Length10.29 mm10.29 mm-
PackagingTubeReel-
Width9.65 mm9.65 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current10 A10 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation50 W50 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity50800-
SubcategoryTransistorsTransistors-
Unit Weight0.080777 oz0.050054 oz-
Fabricante Parte # Descripción RFQ
MJB44H11G Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T4G Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T Nuevo y original
MJB44H11T4G B44H11G Nuevo y original
STMicroelectronics
STMicroelectronics
MJB44H11T4-A Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor
MJB44H11T4-A TRANS NPN 80V 10A D2PAK-3
MJB44H11T4 Bipolar Transistors - Pre-Biased 80V Low Voltage NPN 5V VEBO 10A IC 50W
ON Semiconductor
ON Semiconductor
MJB44H11T4 Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11 Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11 TRANS NPN 80V 10A D2PAK
MJB44H11G Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T4G Bipolar Transistors - BJT 8A 80V 50W NPN
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