MJB44H11G

MJB44H11G
Mfr. #:
MJB44H11G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT 8A 80V 50W NPN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MJB44H11G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJB44H11G DatasheetMJB44H11G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
80 V
Colector- Voltaje base VCBO:
5 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
1 V
Corriente máxima del colector de CC:
10 A
Producto de ganancia de ancho de banda fT:
50 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MJB44H11
Altura:
4.83 mm
Longitud:
10.29 mm
Embalaje:
Tubo
Ancho:
9.65 mm
Marca:
EN Semiconductor
Corriente continua del colector:
10 A
Colector de CC / Ganancia base hfe Min:
60
Pd - Disipación de energía:
50 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
50
Subcategoría:
Transistores
Unidad de peso:
0.080777 oz
Tags
MJB44, MJB4, MJB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
***p One Stop
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2+Tab) D2PAK Tube
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
***ment14 APAC
POWER Transistor, NPN, 80V, D2-PAK; Tran; POWER Transistor, NPN, 80V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; No. of Pins:3Pins
***th Star Micro
D 2 PAK for Surface Mount . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***(Formerly Allied Electronics)
ON Semi MJB44H11T4G NPN Bipolar Transistor; 10 A; 80 V; 3-Pin D2PAK
***emi
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
***Yang
Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***enic
80V 2W 10A NPN TO-263-2 Bipolar Transistors - BJT ROHS
***nell
POWER TRANSISTOR, NPN, 80V, D2-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 50W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transisto
***(Formerly Allied Electronics)
ON Semi NJVMJB44H11T4G NPN Bipolar Transistor; 10 A; 80 V; 3-Pin D2PAK
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ical
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
***enic
80V 2W 10A NPN D2PAK Bipolar Transistors - BJT ROHS
***ure Electronics
NJVMJB Series NPN 50 W 80 V 10 A Surface Mount Power Transistor - TO-263-3
***nell
TRANSISTOR, AEC-Q101, NPN, 80V, TO-263; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 2W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***(Formerly Allied Electronics)
ON Semi MJB41CG NPN Bipolar Transistor; 6 A; 100 V; 3-Pin D2PAK
***p One Stop
Trans GP BJT NPN 100V 6A 2000mW Automotive 3-Pin(2+Tab) D2PAK Tube
***r Electronics
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJB Series 100 V 6 A NPN Complementary Silicon Plastic Power Transistor D2PAK-3
***ark
POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:3MHzRoHS Compliant: Yes
***et Europe
Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) D2PAK T/R
***ponent Stockers USA
8 A 400 V NPN Si POWER TRANSISTOR
***or
NOW WEEN - BUJ105AB - POWER BIPO
Parte # Mfg. Descripción Valores Precio
MJB44H11G
DISTI # V99:2348_07305426
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
509
  • 2500:$0.4839
  • 1000:$0.5137
  • 500:$0.6763
  • 100:$0.7650
  • 10:$1.0016
  • 1:$1.2843
MJB44H11G
DISTI # V36:1790_07305426
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
489
  • 25000:$0.4436
  • 10000:$0.4575
  • 2500:$0.4754
  • 1000:$0.5137
  • 500:$0.6763
  • 100:$0.7650
  • 10:$1.0016
  • 1:$1.2843
MJB44H11G
DISTI # MJB44H11GOS-ND
ON SemiconductorTRANS NPN 80V 10A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
322In Stock
  • 5000:$0.5002
  • 2500:$0.5252
  • 500:$0.7128
  • 100:$0.8629
  • 50:$1.0504
  • 10:$1.1070
  • 1:$1.2400
MJB44H11G
DISTI # 25632830
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
8000
  • 1000:$0.4534
MJB44H11G
DISTI # 31608060
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
600
  • 250:$0.4493
  • 150:$0.4535
  • 100:$0.4594
MJB44H11G
DISTI # 30172932
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
509
  • 2500:$0.4839
  • 1000:$0.5137
  • 500:$0.6754
  • 100:$0.7651
  • 13:$1.0017
MJB44H11G
DISTI # 30573431
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
489
  • 25000:$0.4436
  • 10000:$0.4575
  • 2500:$0.4754
  • 1000:$0.5137
  • 500:$0.6754
  • 100:$0.7651
  • 14:$1.0017
MJB44H11G
DISTI # 30585623
ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
155
  • 40:$0.6260
MJB44H11G
DISTI # MJB44H11G
ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail - Rail/Tube (Alt: MJB44H11G)
RoHS: Compliant
Min Qty: 50
Container: Tube
Americas - 2077
  • 500:$0.4411
  • 250:$0.4523
  • 150:$0.4581
  • 100:$0.4640
  • 50:$0.4671
MJB44H11G
DISTI # MJB44H11G
ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail (Alt: MJB44H11G)
RoHS: Compliant
Min Qty: 50
Europe - 0
  • 500:€0.4519
  • 300:€0.4869
  • 200:€0.5279
  • 100:€0.5759
  • 50:€0.7039
MJB44H11G
DISTI # MJB44H11G
ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: MJB44H11G)
RoHS: Compliant
Min Qty: 625
Container: Bulk
Americas - 0
  • 6250:$0.4929
  • 3125:$0.5059
  • 1875:$0.5119
  • 1250:$0.5189
  • 625:$0.5219
MJB44H11G
DISTI # 42K1267
ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: 42K1267)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 10000:$0.4580
  • 2500:$0.4760
  • 1000:$0.5360
  • 500:$0.6790
  • 100:$0.7690
  • 10:$1.0100
  • 1:$1.1800
MJB44H11G
DISTI # 82Y6984
ON SemiconductorTRANSISTOR, BIPOL, NPN, 80V, TO-263-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:50MHz,Power Dissipation Pd:50W,DC Collector Current:10A,DC Current Gain hFE:40hFE,Transistor Case RoHS Compliant: Yes385
  • 10000:$0.4630
  • 2500:$0.4810
  • 1000:$0.5410
  • 500:$0.6860
  • 100:$0.7770
  • 10:$1.0200
  • 1:$1.1900
MJB44H11G
DISTI # 42K1267
ON SemiconductorPOWER TRANSISTOR, NPN, 80V, D2-PAK,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:50MHz,Power Dissipation Pd:50W,DC Collector Current:10A,DC Current Gain hFE:60hFE,No. of Pins:3Pins RoHS Compliant: Yes242
  • 10000:$0.4630
  • 2500:$0.4810
  • 1000:$0.5410
  • 500:$0.6860
  • 100:$0.7770
  • 10:$1.0200
  • 1:$1.1900
MJB44H11G.
DISTI # 27AC8946
ON SemiconductorBIP D2PAK NPN 8A 80V ROHS COMPLIANT: YES0
  • 10000:$0.4630
  • 2500:$0.4810
  • 1000:$0.5410
  • 500:$0.6860
  • 100:$0.7930
  • 10:$1.0500
  • 1:$1.2200
MJB44H11G
DISTI # 863-MJB44H11G
ON SemiconductorBipolar Transistors - BJT 8A 80V 50W NPN
RoHS: Compliant
4529
  • 1:$1.1800
  • 10:$1.0100
  • 100:$0.7690
  • 500:$0.6790
  • 1000:$0.5360
  • 2500:$0.4760
  • 10000:$0.4580
MJB44H11GON SemiconductorPower Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RoHS: Compliant
3850
  • 1000:$0.5300
  • 500:$0.5500
  • 100:$0.5800
  • 25:$0.6000
  • 1:$0.6500
MJB44H11G
DISTI # 2535625
ON SemiconductorTRANSISTOR, BIPOL, NPN, 80V, TO-263-3
RoHS: Compliant
385
  • 25000:$0.6830
  • 10000:$0.7040
  • 2500:$0.7320
  • 1000:$0.8250
  • 500:$1.0500
  • 100:$1.1900
  • 10:$1.5600
  • 1:$1.8200
MJB44H11G.
DISTI # 1705896
ON SemiconductorPOWER TRANSISTOR, NPN, 80V, D2-PAK
RoHS: Compliant
242
  • 25000:$0.6830
  • 10000:$0.7040
  • 2500:$0.7320
  • 1000:$0.8250
  • 500:$1.0500
  • 100:$1.1900
  • 10:$1.5600
  • 1:$1.8200
MJB44H11G
DISTI # 2535625
ON SemiconductorTRANSISTOR, BIPOL, NPN, 80V, TO-263-3756
  • 500:£0.4970
  • 250:£0.5300
  • 100:£0.5630
  • 25:£0.7400
  • 5:£0.8660
Imagen Parte # Descripción
HIP4080AIBZT

Mfr.#: HIP4080AIBZT

OMO.#: OMO-HIP4080AIBZT

Gate Drivers VERSION OF HIP4080AI BT
PBSS4360XF

Mfr.#: PBSS4360XF

OMO.#: OMO-PBSS4360XF

Bipolar Transistors - BJT Bipolar Discretes SOT89
MJB45H11G

Mfr.#: MJB45H11G

OMO.#: OMO-MJB45H11G

Bipolar Transistors - BJT 8A 80V 50W PNP
MURS320T3G

Mfr.#: MURS320T3G

OMO.#: OMO-MURS320T3G

Rectifiers 200V 3A Ultrafast
MBRS1100T3G

Mfr.#: MBRS1100T3G

OMO.#: OMO-MBRS1100T3G

Schottky Diodes & Rectifiers 1A 100V
STPS1045B-TR

Mfr.#: STPS1045B-TR

OMO.#: OMO-STPS1045B-TR

Schottky Diodes & Rectifiers 10 Amp 45 Volt
H8680RBYA

Mfr.#: H8680RBYA

OMO.#: OMO-H8680RBYA

Metal Film Resistors - Through Hole H8 680R 0.1% 15PPM
HIP4080AIBZT

Mfr.#: HIP4080AIBZT

OMO.#: OMO-HIP4080AIBZT-INTERSIL

Gate Drivers VERSION OF HIP4080AI BT
H8680RBYA

Mfr.#: H8680RBYA

OMO.#: OMO-H8680RBYA-TE-CONNECTIVITY-AMP

Metal Film Resistors - Through Hole H8 680R 0.1% 15PPM
MURS320T3G

Mfr.#: MURS320T3G

OMO.#: OMO-MURS320T3G-ON-SEMICONDUCTOR

Rectifiers 200V 3A Ultrafast
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de MJB44H11G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,18 US$
1,18 US$
10
1,01 US$
10,10 US$
100
0,77 US$
76,90 US$
500
0,68 US$
339,50 US$
1000
0,54 US$
536,00 US$
2500
0,48 US$
1 190,00 US$
10000
0,46 US$
4 580,00 US$
25000
0,44 US$
11 100,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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