PartNumber | MAGX-001214-125L00 | MAGX-001090-600L00 | MAGX-001090-600L0S |
Description | RF JFET Transistors 1.2-1.4GHz 50Volt 125W Pk Gain 18dB | RF JFET Transistors 1030-1090MHz 600W pk GaN Flanged | RF JFET Transistors 1030-1090MHz 600W pk GaN Flangeless |
Manufacturer | MACOM | - | MACOM |
Product Category | RF JFET Transistors | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Transistor Type | HEMT | - | HEMT |
Technology | GaN SiC | - | GaN SiC |
Gain | 18.4 dB | - | 20.8 dB |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 175 V | - | - |
Vgs Gate Source Breakdown Voltage | - 8 V | - | - |
Id Continuous Drain Current | 4.4 A | - | - |
Output Power | 125 W | - | 600 W |
Minimum Operating Temperature | - 40 C | - | - 40 C |
Maximum Operating Temperature | + 95 C | - | + 95 C |
Pd Power Dissipation | 115 W | - | - |
Mounting Style | SMD/SMT | - | SMD/SMT |
Packaging | Tray | - | Bulk |
Configuration | Common Source | - | Common Source |
Operating Frequency | 1.2 GHz to 1.4 GHz | - | 1030 MHz to 1090 MHz |
Operating Temperature Range | - 40 C to + 95 C | - | - 40 C to + 95 C |
Product | RF JFET | - | - |
Type | GaN SiC HEMT | - | - |
Brand | MACOM | - | - |
Forward Transconductance Min | 2.5 S | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | Transistors | - | - |
Vgs th Gate Source Threshold Voltage | - 3.8 V | - | - |
Package Case | - | - | Ceramic-2 |
Pd Power Dissipation | - | - | 2.3 kW |
Id Continuous Drain Current | - | - | 20.4 A |
Vds Drain Source Breakdown Voltage | - | - | 175 V |
Vgs th Gate Source Threshold Voltage | - | - | - 3.1 V |
Forward Transconductance Min | - | - | 12.5 S |
Vgs Gate Source Breakdown Voltage | - | - | - 8 V |