LND150N3-G-P

LND150N3-G-P002 vs LND150N3-G-P013 vs LND150N3-G-P003

 
PartNumberLND150N3-G-P002LND150N3-G-P013LND150N3-G-P003
DescriptionMOSFET DepletionMode MOSFETMOSFET DepletionMode MOSFETMOSFET DepletionMode MOSFET
ManufacturerMicrochipMicrochipMicrochip
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V500 V
Id Continuous Drain Current30 mA30 mA30 mA
Rds On Drain Source Resistance1 kOhms1 kOhms1 kOhms
Vgs Gate Source Voltage20 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation740 mW740 mW740 mW
ConfigurationSingleSingleSingle
Channel ModeDepletionDepletionDepletion
PackagingReelAmmo PackReel
Height5.33 mm5.33 mm5.33 mm
Length5.21 mm5.21 mm5.21 mm
ProductMOSFET Small SignalMOSFET Small SignalMOSFET Small Signal
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.19 mm4.19 mm4.19 mm
BrandMicrochip TechnologyMicrochip TechnologyMicrochip Technology
Fall Time1300 ns1300 ns1300 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time450 ns450 ns450 ns
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns100 ns100 ns
Typical Turn On Delay Time90 ns90 ns90 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Fabricante Parte # Descripción RFQ
Microchip Technology
Microchip Technology
LND150N3-G-P002 MOSFET DepletionMode MOSFET
LND150N3-G-P014 MOSFET DepletionMode MOSFET
LND150N3-G-P013 MOSFET DepletionMode MOSFET
LND150N3-G-P003 MOSFET DepletionMode MOSFET
LND150N3-G-P002 MOSFET N-CH 500V 30MA TO92-3
LND150N3-G-P003 MOSFET N-CH 500V 30MA TO92-3
LND150N3-G-P013 MOSFET N-CH 500V 30MA TO92-3
LND150N3-G-P014 MOSFET N-CH 500V 30MA TO92-3
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