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LND150N3-G-P003

LND150N3-G-P003
Mfr. #:
LND150N3-G-P003
Fabricante:
Microchip Technology
Descripción:
MOSFET DepletionMode MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
LND150N3-G-P003 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
LND150N3-G-P003 más información LND150N3-G-P003 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
30 mA
Rds On - Resistencia de la fuente de drenaje:
1 kOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
740 mW
Configuración:
Único
Modo de canal:
Agotamiento
Embalaje:
Carrete
Altura:
5.33 mm
Longitud:
5.21 mm
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 N-Channel
Ancho:
4.19 mm
Marca:
Tecnología de microchip
Otoño:
1300 ns
Tipo de producto:
MOSFET
Hora de levantarse:
450 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
100 ns
Tiempo típico de retardo de encendido:
90 ns
Unidad de peso:
0.016000 oz
Tags
LND150N3-G-P, LND150N3-G, LND150N3, LND150N, LND150, LND15, LND1, LND
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
***rochip
MOSFET, DEPLETION-MODE, 500V, 1K Ohm
***rochip SCT
Depletion-Mode N-Channel, 1000Ω, -1 to -3V, TO-92-3, RoHS
***roFlash
Small Signal Field-Effect Transistor
***i-Key
MOSFET N-CH 500V 380MA TO-92
***ser
MOSFETs N-CH/400V/5 A/.75OHM
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
***inecomponents.com
500V, NCH MOSFET
***ure Electronics
P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ical
Trans MOSFET P-CH 60V 0.16A Automotive 3-Pin E-Line
***ark
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
***ponent Sense
MOSFET, P CH, 60V, -160mA, E-LIN
***id Electronics
Diodes Inc ZVP3306A P Channel MOSFET
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
***ure Electronics
N-Channel 60 V 2 Ohm Enhancement Mode Vertical DMOS FET- TO-92
***nell
MOSFET, N, 60V, 0.45A, E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power D
***ource
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
***ure Electronics
N-Channel 60 V 1 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ical
Trans MOSFET N-CH 60V 0.6A Automotive 3-Pin E-Line
***ark
N CHANNEL MOSFET, 60V, 600mA, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:600mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***el Electronic
LDO Voltage Regulators 200mA Lo IQ LDO Linear Reg
***S
French Electronic Distributor since 1988
***p One Stop Global
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
***el Electronic
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Parte # Mfg. Descripción Valores Precio
LND150N3-G-P003
DISTI # V36:1790_06439618		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 2000:$0.3963
LND150N3-G-P003
DISTI # V72:2272_06439618		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		1880
  • 1000:$0.4255
  • 500:$0.4415
  • 250:$0.4575
  • 100:$0.4735
  • 25:$0.4896
  • 10:$0.5561
  • 1:$0.5596
LND150N3-G-P003
DISTI # LND150N3-G-P003CT-ND		Microchip Technology IncMOSFET N-CH 500V 30MA TO92-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1980In Stock
  • 100:$0.3914
  • 25:$0.4224
  • 1:$0.5200
LND150N3-G-P003
DISTI # LND150N3-G-P003DKR-ND		Microchip Technology IncMOSFET N-CH 500V 30MA TO92-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1980In Stock
  • 100:$0.3914
  • 25:$0.4224
  • 1:$0.5200
LND150N3-G-P003
DISTI # LND150N3-G-P003TR-ND		Microchip Technology IncMOSFET N-CH 500V 30MA TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.3914
LND150N3-G-P003
DISTI # 31333942		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 2000:$0.3963
LND150N3-G-P003
DISTI # 30200324		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		1880
  • 16:$0.5596
LND150N3-G-P003
DISTI # LND150N3-G-P003		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R - Tape and Reel (Alt: LND150N3-G-P003)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.4059
  • 12000:$0.4119
  • 8000:$0.4249
  • 4000:$0.4389
  • 2000:$0.4539
LND150N3-G-P003
DISTI # LND150N3-G-P003		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R (Alt: LND150N3-G-P003)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Asia - 0
  • 100000:$0.3810
  • 50000:$0.3902
  • 20000:$0.4000
  • 10000:$0.4103
  • 6000:$0.4210
  • 4000:$0.4384
  • 2000:$0.4571
LND150N3-G-P003
DISTI # 67X5306		Microchip Technology IncMOSFET, DEPLETION-MODE, 500V, 1K OHM 3 TO-92 T/R0
  • 100:$0.4030
  • 25:$0.4150
  • 10:$0.4830
  • 1:$0.5820
LND150N3-G-P003
DISTI # 70484012		Microchip Technology IncMOSFET,DEPLETION-MODE,500V,1K Ohm3 TO-92T/R
RoHS: Compliant		0
  • 2000:$0.3830
  • 4000:$0.3750
  • 10000:$0.3640
LND150N3-G-P003
DISTI # LND150N3-G-P003		Microchip Technology IncMOSFETDEPLETION-MODE500V1K Ohm
RoHS: Compliant
Min Qty: 1
Package Multiple: 1
Container: Reel		26000
  • 1000:$0.3600
  • 100:$0.3800
  • 26:$0.4100
  • 1:$0.5000
LND150N3-G-P003
DISTI # 689-LND150N3-G-P003		Microchip Technology IncMOSFET DepletionMode MOSFET
RoHS: Compliant		1720
  • 1:$0.5100
  • 10:$0.5070
  • 25:$0.4220
  • 100:$0.3910
  • 2000:$0.3910
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de LND150N3-G-P003 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,51 US$
0,51 US$
10
0,51 US$
5,07 US$
25
0,42 US$
10,55 US$
100
0,39 US$
39,10 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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