| PartNumber | KSB1116AGBU | KSB1116AGTA | KSB1116ALBU |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil | TRANS PNP 60V 1A TO-92 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | TO-92-3 Kinked Lead | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - |
| Collector Base Voltage VCBO | - 80 V | - 80 V | - |
| Emitter Base Voltage VEBO | - 6 V | - 6 V | - |
| Collector Emitter Saturation Voltage | - 0.2 V | - 0.2 V | - |
| Maximum DC Collector Current | 1 A | 1 A | - |
| Gain Bandwidth Product fT | 120 MHz | 120 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | KSB1116A | KSB1116A | - |
| DC Current Gain hFE Max | 400 | 400 | - |
| Height | 5.33 mm | 4.7 mm | - |
| Length | 5.2 mm | 4.7 mm | - |
| Packaging | Bulk | Ammo Pack | - |
| Width | 4.19 mm | 3.93 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | - 1 A | - 1 A | - |
| DC Collector/Base Gain hfe Min | 135 | 135 | - |
| Pd Power Dissipation | 750 mW | 750 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.006286 oz | 0.008466 oz | - |
| Part # Aliases | - | KSB1116AGTA_NL | - |