Jan2N3501

Jan2N3501 vs Jan2N3501L vs Jan2N3501/TR

 
PartNumberJan2N3501Jan2N3501LJan2N3501/TR
DescriptionBipolar Transistors - BJT Small-Signal BJTBipolar Transistors - BJT Small-Signal BJTBipolar Transistors - BJT
ManufacturerMicrochipMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNNN
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max150 V-150 V
Collector Base Voltage VCBO150 V-150 V
Emitter Base Voltage VEBO6 V-6 V
Collector Emitter Saturation Voltage200 mV-0.4 V
Maximum DC Collector Current300 mA-300 mA
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 200 C-+ 200 C
PackagingBulkTray-
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Pd Power Dissipation1 W-1 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity111
SubcategoryTransistorsTransistorsTransistors
Package / Case--TO-39-3
DC Current Gain hFE Max--300 at 150 mA, 10 V
DC Collector/Base Gain hfe Min--20 at 300 mA, 10 V
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
Jan2N3501 Bipolar Transistors - BJT Small-Signal BJT
JAN2N3501UB Bipolar Transistors - BJT Small-Signal BJT
Jan2N3501L/TR Bipolar Transistors - BJT
Jan2N3501L Bipolar Transistors - BJT Small-Signal BJT
Jan2N3501/TR Bipolar Transistors - BJT
JAN2N3501UB/TR Bipolar Transistors - BJT
JAN2N3501 TRANS NPN 150V 0.3A
JAN2N3501L TRANS NPN 150V 0.3A
JAN2N3501UB TRANS NPN 150V 0.3A TO39
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