 |  | | |
| PartNumber | IXTQ26N50P | IXTQ26000RDA | IXTQ26N50PS |
| Description | MOSFET 26.0 Amps 500 V 0.23 Ohm Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3P-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 26 A | - | - |
| Rds On Drain Source Resistance | 230 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 400 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 20.3 mm | - | - |
| Length | 15.8 mm | - | - |
| Series | IXTQ26N50 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.9 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 31 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 58 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.194007 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXTQ26P20P | MOSFET -26.0 Amps -200V 0.170 Rds | |
| IXTQ26N50P | MOSFET 26.0 Amps 500 V 0.23 Ohm Rds | ||
| IXTQ26N60P | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | ||
| IXTQ26000RDA | Nuevo y original | ||
| IXTQ26N50PS | Nuevo y original | ||
| IXTQ26N60P | IGBT Transistors MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | ||
| IXTQ26P20P | IGBT Transistors MOSFET -26.0 Amps -200V 0.170 Rds | ||
| IXTQ26N50P | IGBT Transistors MOSFET 26.0 Amps 500 V 0.23 Ohm Rds |