PartNumber | IXTQ22N60P | IXTQ22N50P | IXTQ200N10T |
Description | MOSFET 22.0 Amps 600 V 0.33 Ohm Rds | MOSFET 22.0 Amps 500 V 0.27 Ohm Rds | MOSFET 200 Amps 100V 5.4 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3P-3 | TO-3P | TO-3P-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 100 V |
Id Continuous Drain Current | 22 A | 22 A | 200 A |
Rds On Drain Source Resistance | 350 mOhms | 270 mOhms | 5.5 mOhms |
Vgs Gate Source Voltage | 30 V | 10 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 400 W | 350 W | 550 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 20.3 mm | 20.3 mm | 20.3 mm |
Length | 15.8 mm | 15.8 mm | 15.8 mm |
Series | IXTQ22N60 | IXTQ22N50 | IXTQ200N10 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.9 mm | 4.9 mm | 4.9 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 21 S | 12 S | - |
Fall Time | 23 ns | 21 ns | 34 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 25 ns | 31 ns |
Factory Pack Quantity | 30 | 3 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 72 ns | 45 ns |
Typical Turn On Delay Time | 20 ns | 22 ns | 35 ns |
Unit Weight | 0.194007 oz | 0.194007 oz | 0.194007 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Qg Gate Charge | - | 50 nC | - |
Tradename | - | - | HiPerFET |