IXTK60

IXTK60N50L2 vs IXTK600N04T2 vs IXTK60N25

 
PartNumberIXTK60N50L2IXTK600N04T2IXTK60N25
DescriptionMOSFET 60 Amps 500VMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V40 V-
Id Continuous Drain Current60 A600 A-
Rds On Drain Source Resistance100 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage4.5 V1.5 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge610 nC590 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation960 W1.25 kW-
Channel ModeEnhancementEnhancement-
TradenameLinearL2HiPerFET-
PackagingTubeTube-
Height26.59 mm--
Length20.29 mm--
SeriesIXTK60N50IXTK600N04-
TypeLinearL2 Power MOSFETTrenchT2 GigaMOS-
Width5.31 mm--
BrandIXYSIXYS-
Forward Transconductance Min18 S90 S-
Fall Time38 ns250 ns-
Product TypeMOSFETMOSFET-
Rise Time40 ns20 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time165 ns90 ns-
Typical Turn On Delay Time40 ns40 ns-
Unit Weight0.264555 oz0.352740 oz-
Number of Channels-1 Channel-
Configuration-Single-
Product-MOSFET Gate Drivers-
Transistor Type-1 N-Channel-
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXTK60N50L2 MOSFET 60 Amps 500V
IXTK600N04T2 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXTK600N04T2 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXTK60N25 Nuevo y original
IXTK60N50L2 MOSFET N-CH 500V 60A TO-264
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