PartNumber | IXTK60N50L2 | IXTK600N04T2 | IXTK60N25 |
Description | MOSFET 60 Amps 500V | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-264-3 | TO-264-3 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | 40 V | - |
Id Continuous Drain Current | 60 A | 600 A | - |
Rds On Drain Source Resistance | 100 mOhms | 1.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | - |
Qg Gate Charge | 610 nC | 590 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 960 W | 1.25 kW | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | LinearL2 | HiPerFET | - |
Packaging | Tube | Tube | - |
Height | 26.59 mm | - | - |
Length | 20.29 mm | - | - |
Series | IXTK60N50 | IXTK600N04 | - |
Type | LinearL2 Power MOSFET | TrenchT2 GigaMOS | - |
Width | 5.31 mm | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 18 S | 90 S | - |
Fall Time | 38 ns | 250 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 40 ns | 20 ns | - |
Factory Pack Quantity | 25 | 25 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 165 ns | 90 ns | - |
Typical Turn On Delay Time | 40 ns | 40 ns | - |
Unit Weight | 0.264555 oz | 0.352740 oz | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Product | - | MOSFET Gate Drivers | - |
Transistor Type | - | 1 N-Channel | - |