IXGF3

IXGF32N170 vs IXGF36N300 vs IXGF30N400

 
PartNumberIXGF32N170IXGF36N300IXGF30N400
DescriptionIGBT Transistors 26 Amps 1700V 3.5 V RdsIGBT TransistorsIGBT 4000V 30A 160W I4-PAK
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseISOPLUS i4-Pak-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.7 kV--
Collector Emitter Saturation Voltage2.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C44 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGF32N170Very High Voltage-
PackagingTubeTube-
Continuous Collector Current Ic Max200 A--
Height21.34 mm--
Length20.29 mm--
Operating Temperature Range- 55 C to + 150 C--
Width5.21 mm--
BrandIXYSIXYS-
Continuous Collector Current44 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity25--
SubcategoryIGBTsIGBTs-
Unit Weight0.211644 oz0.229281 oz-
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXGF32N170 IGBT Transistors 26 Amps 1700V 3.5 V Rds
IXGF36N300 IGBT Transistors
IXGF30N400 IGBT 4000V 30A 160W I4-PAK
IXGF36N300 IGBT 3000V 36A 160W I4-PAK
IXGF32N170 IGBT Transistors 26 Amps 1700V 3.5 V Rds
Top