IXFN26N

IXFN26N100P vs IXFN26N120P vs IXFN26N50Q

 
PartNumberIXFN26N100PIXFN26N120PIXFN26N50Q
DescriptionMOSFET 26 Amps 1000V 0.39 RdsMOSFET 26 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleChassis MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1.2 kV-
Id Continuous Drain Current23 A23 A-
Rds On Drain Source Resistance390 mOhms460 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation595 W695 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height9.6 mm9.6 mm-
Length38.23 mm38.23 mm-
SeriesIXFN26N100IXFN26N120-
Transistor Type1 N-Channel1 N-Channel-
Width25.42 mm25.42 mm-
BrandIXYSIXYS-
Fall Time50 ns58 ns-
Product TypeMOSFETMOSFET-
Rise Time45 ns55 ns-
Factory Pack Quantity1010-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time72 ns76 ns-
Typical Turn On Delay Time45 ns56 ns-
Unit Weight1.058219 oz1.058219 oz-
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXFN26N100P MOSFET 26 Amps 1000V 0.39 Rds
IXFN26N120P MOSFET 26 Amps 1200V
IXFN26N90 MOSFET 900V 26A
IXFN26N50Q Nuevo y original
IXFN26N90 MOSFET 900V 26A
IXFN26N120P MOSFET 26 Amps 1200V
IXFN26N100P MOSFET 26 Amps 1000V 0.39 Rds
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