PartNumber | IXFN26N100P | IXFN26N120P | IXFN26N50Q |
Description | MOSFET 26 Amps 1000V 0.39 Rds | MOSFET 26 Amps 1200V | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Package / Case | SOT-227-4 | SOT-227-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | 1.2 kV | - |
Id Continuous Drain Current | 23 A | 23 A | - |
Rds On Drain Source Resistance | 390 mOhms | 460 mOhms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 595 W | 695 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | Tube | - |
Height | 9.6 mm | 9.6 mm | - |
Length | 38.23 mm | 38.23 mm | - |
Series | IXFN26N100 | IXFN26N120 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 25.42 mm | 25.42 mm | - |
Brand | IXYS | IXYS | - |
Fall Time | 50 ns | 58 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 45 ns | 55 ns | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 72 ns | 76 ns | - |
Typical Turn On Delay Time | 45 ns | 56 ns | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |