IXFN26N90

IXFN26N90
Mfr. #:
IXFN26N90
Fabricante:
Littelfuse
Descripción:
MOSFET 900V 26A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN26N90 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
FET - Single
Serie
IXFN26N90
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HyperFET
Paquete-Estuche
SOT-227-4
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente dual única
Tipo transistor
1 N-Channel
Disipación de potencia Pd
600 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
24 ns
Hora de levantarse
35 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
26 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Resistencia a la fuente de desagüe de Rds
300 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
130 ns
Tiempo de retardo de encendido típico
60 ns
Transconductancia directa-Mín.
28 S
Modo de canal
Mejora
Tags
IXFN26N, IXFN26, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 26 A, 900 V, 300 Mohm, 10 V, 5 V Rohs Compliant: Yes
***inecomponents.com
Trans MOSFET N-CH 900V 26A 4-Pin SOT-227B
***ment14 APAC
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:900V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:600W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:3; Avalanche Single Pulse Energy Eas:3J; Current Id Max:26A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:300mohm; Package / Case:ISOTOP; Power Dissipation Pd:600W; Power Dissipation Pd:600W; Pulse Current Idm:104A; Rate of Voltage Change dv / dt:5Vµs; Repetitive Avalanche Energy Max:64mJ; Termination Type:Screw; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Weight:0.044kg
Parte # Mfg. Descripción Valores Precio
IXFN26N90
DISTI # V99:2348_17750909
IXYS CorporationTrans MOSFET N-CH 900V 26A 4-Pin SOT-227B
RoHS: Compliant
0
    IXFN26N90
    DISTI # IXFN26N90-ND
    IXYS CorporationMOSFET N-CH 900V 26A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    175In Stock
    • 100:$26.9864
    • 30:$29.0360
    • 10:$31.5980
    • 1:$34.1600
    IXFN26N90
    DISTI # 14J1685
    IXYS CorporationMOSFET Transistor, N Channel, 26 A, 900 V, 300 mohm, 10 V, 5 V RoHS Compliant: Yes0
      IXFN26N90
      DISTI # 747-IXFN26N90
      IXYS CorporationMOSFET 900V 26A
      RoHS: Compliant
      0
      • 20:$31.6000
      • 30:$29.0400
      • 50:$27.8000
      • 100:$26.9900
      • 200:$24.7700
      IXFN26N90
      DISTI # 4905570
      IXYS CorporationMOSFET, N, SOT-227B
      RoHS: Compliant
      0
      • 250:$37.5200
      • 100:$40.8900
      • 30:$43.9900
      • 10:$47.8700
      • 1:$51.7500
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      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de IXFN26N90 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      37,16 US$
      37,16 US$
      10
      35,30 US$
      352,97 US$
      100
      33,44 US$
      3 343,95 US$
      500
      31,58 US$
      15 790,90 US$
      1000
      29,72 US$
      29 724,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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