 | | |
| PartNumber | IXFN120N65X2 | IXFN120N20 |
| Description | MOSFET 650V/108A Ultra Junction X2-Class | MOSFET 200V 120A |
| Manufacturer | IXYS | IXYS |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 200 V |
| Id Continuous Drain Current | 108 A | 120 A |
| Rds On Drain Source Resistance | 24 mOhms | 17 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.7 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V |
| Qg Gate Charge | 225 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 890 W | 600 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET |
| Packaging | Tube | Tube |
| Series | 650V Ultra Junction X2 | IXFN120N20 |
| Brand | IXYS | IXYS |
| Forward Transconductance Min | 46 S | 77 S |
| Fall Time | 12 ns | 40 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 23 ns | 55 ns |
| Factory Pack Quantity | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | 110 ns |
| Typical Turn On Delay Time | 64 ns | 42 ns |
| Unit Weight | 1.058219 oz | 1.058219 oz |
| Number of Channels | - | 1 Channel |
| Height | - | 9.6 mm |
| Length | - | 38.23 mm |
| Transistor Type | - | 1 N-Channel |
| Width | - | 25.42 mm |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXFN120N65X2 | MOSFET 650V/108A Ultra Junction X2-Class | |
| IXFN120N20 | MOSFET 200V 120A | ||
| IXFN120N65X2 | MOSFET N-CH 650V 108A SOT-227 | ||
| IXFN120N20 | MOSFET 200V 120A | ||
| IXFN120N20P | Nuevo y original | ||
| IXFN120N25 | MOSFET N-CH 250V 120A SOT-227B |