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IXFN120N65X2

IXFN120N65X2
Mfr. #:
IXFN120N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET 650V/108A Ultra Junction X2-Class
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN120N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN120N65X2 DatasheetIXFN120N65X2 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFN120N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
108 A
Rds On - Resistencia de la fuente de drenaje:
24 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.7 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
225 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
890 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
650V Ultra Junction X2
Marca:
IXYS
Transconductancia directa - Mín .:
46 S
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
86 ns
Tiempo típico de retardo de encendido:
64 ns
Unidad de peso:
1.058219 oz
Tags
IXFN12, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 108 A 890 W Surface Mount X2-Class HiPerFETTM Mosfet - SOT-227B
***i-Key
MOSFET N-CH 650V 108A SOT227B
*** Services
CoC and 2-years warranty / RFQ for pricing
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXFN120N65X2
DISTI # V36:1790_15877025		IXYS CorporationTrans MOSFET N-CH 650V 108A 4-Pin SOT-227B0
    IXFN120N65X2
    DISTI # IXFN120N65X2-ND    		IXYS CorporationMOSFET N-CH 650V 108A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 500:$19.5720
    • 100:$22.0884
    • 30:$23.7660
    • 10:$25.8630
    • 1:$27.9600
    IXFN120N65X2
    DISTI # 747-IXFN120N65X2    		IXYS CorporationMOSFET 650V/108A Ultra Junction X2-Class
    RoHS: Compliant    		101
    • 1:$27.9600
    • 5:$26.5600
    • 10:$25.8600
    • 25:$23.7700
    • 50:$22.7500
    • 100:$22.0800
    • 200:$20.2700
    Imagen Parte # Descripción
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    Mfr.#: CRCW1206243RFKEA

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    IXDN630MYI

    Mfr.#: IXDN630MYI

    OMO.#: OMO-IXDN630MYI-IXYS-INTEGRATED-CIRCUITS-DIVIS

    		 Gate Drivers 9V 5-PIN TO-263 MOSFET DRIVER; 30A
    4795.0000

    Mfr.#: 4795.0000

    OMO.#: OMO-4795-0000-SCHURTER

    		 AC Power Entry Modules 16A REWRBL CONNECTOR
    IXTN102N65X2

    Mfr.#: IXTN102N65X2

    OMO.#: OMO-IXTN102N65X2-IXYS-CORPORATION

    		 MOSFET N-CH 650V 76A X2 SOT-227
    IXFN150N65X2

    Mfr.#: IXFN150N65X2

    OMO.#: OMO-IXFN150N65X2-IXYS-CORPORATION

    		 MOSFET N-CH 650V 145A SOT-227
    Disponibilidad
    Valores:
    341
    En orden:
    2324
    Ingrese la cantidad:
    El precio actual de IXFN120N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    27,96 US$
    27,96 US$
    5
    26,56 US$
    132,80 US$
    10
    25,86 US$
    258,60 US$
    25
    23,77 US$
    594,25 US$
    50
    22,75 US$
    1 137,50 US$
    100
    22,08 US$
    2 208,00 US$
    200
    20,27 US$
    4 054,00 US$
    500
    19,29 US$
    9 645,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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