 |  |  | |
| PartNumber | IXFH80N65X2-4 | IXFH80N65X2 | IXFH80N65X |
| Description | MOSFET 650V/80A TO-247-4L | MOSFET MOSFET 650V/80A Ultra Junction X2 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-4 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 38 mOhms | 40 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 2.7 V | - |
| Vgs Gate Source Voltage | 10 V | 30 V | - |
| Qg Gate Charge | 140 nC | 143 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 890 W | 890 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | 650V Ultra Junction X2 | 650V Ultra Junction X2 | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 33 S | 36 S | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | 42 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 70 ns | 60 ns | - |
| Typical Turn On Delay Time | 32 ns | 40 ns | - |
| Unit Weight | - | 0.056438 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXFH80N65X2-4 | MOSFET 650V/80A TO-247-4L | |
| IXFH80N65X2 | MOSFET MOSFET 650V/80A Ultra Junction X2 | ||
| IXFH80N65X | Nuevo y original | ||
| IXFH80N65X2 | MOSFET N-CH 650V 80A TO-247 | ||
| IXFH80N65X2-4 | MOSFET N-CH |