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IXFH80N65X2

IXFH80N65X2
Mfr. #:
IXFH80N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET MOSFET 650V/80A Ultra Junction X2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH80N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH80N65X2 DatasheetIXFH80N65X2 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFH80N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
40 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.7 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
143 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
890 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
650V Ultra Junction X2
Marca:
IXYS
Transconductancia directa - Mín .:
36 S
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
42 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
40 ns
Unidad de peso:
0.056438 oz
Tags
IXFH80N6, IXFH80, IXFH8, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXYS IXFH80N65X2
***ark
Mosfet, N Channel, 650V, 80A, To-247 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247
***i-Key
MOSFET N-CH 650V 80A TO-247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 80A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:890W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 650V, 80A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.038ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:890W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HiPerFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXFH80N65X2
DISTI # C1S331700121901		IXYS CorporationMOSFETs60
  • 50:$10.1000
  • 10:$11.0000
  • 5:$13.4000
  • 1:$15.0000
IXFH80N65X2
DISTI # IXFH80N65X2-ND		IXYS CorporationMOSFET N-CH 650V 80A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		3006In Stock
  • 510:$7.5702
  • 120:$9.0354
  • 30:$10.0123
  • 1:$12.2100
IXFH80N65X2-4
DISTI # IXFH80N65X2-4-ND		IXYS CorporationMOSFET N-CH
RoHS: Not compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$11.1847
IXFH80N65X2
DISTI # 31264563		IXYS CorporationTrans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-24760
  • 2:$5.9396
IXFH80N65X2
DISTI # 02AC9803		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes19
  • 1:$12.7600
  • 10:$11.4900
  • 25:$9.5600
  • 50:$8.8800
  • 100:$8.6800
  • 250:$7.9300
  • 500:$7.2300
IXFH80N65X2
DISTI # 747-IXFH80N65X2		IXYS CorporationMOSFET MOSFET 650V/80A Ultra Junction X2
RoHS: Compliant		382
  • 1:$12.7600
  • 10:$11.4900
  • 25:$9.5600
  • 50:$8.8800
  • 100:$8.6800
  • 250:$7.9300
  • 500:$7.2300
  • 1000:$6.8900
IXFH80N65X2
DISTI # 1464236		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU90
  • 30:£7.0470
  • 120:£6.7120
  • 300:£6.4060
  • 600:£5.7920
  • 900:£5.3290
IXFH80N65X2
DISTI # 9171439P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU13
  • 5:£8.6900
  • 10:£8.4600
  • 30:£8.2400
  • 90:£8.0400
IXFH80N65X2
DISTI # 2674750		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		19
  • 1:£10.5800
  • 5:£10.0500
  • 10:£7.5300
  • 50:£6.9900
  • 100:£6.8300
IXFH80N65X2
DISTI # 2674750		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		19
  • 1:$15.0400
  • 10:$14.0600
  • 100:$12.4400
  • 500:$11.7600
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Disponibilidad
Valores:
362
En orden:
2345
Ingrese la cantidad:
El precio actual de IXFH80N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,10 US$
11,10 US$
10
10,10 US$
101,00 US$
25
9,10 US$
227,50 US$
50
8,88 US$
444,00 US$
100
8,21 US$
821,00 US$
250
7,93 US$
1 982,50 US$
500
6,88 US$
3 440,00 US$
1000
6,39 US$
6 390,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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