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| PartNumber | IXFB100N50Q3 | IXFB100N50P | IXFB100N50 |
| Description | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | MOSFET 100 Amps 500V 0.05 Ohms Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | PLUS-264-3 | PLUS-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 49 mOhms | 49 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 255 nC | 240 nC | - |
| Pd Power Dissipation | 1.56 kW | 1.25 kW | - |
| Configuration | Single | Single | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | IXFB100N50 | IXFB100N50 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 250 ns | 29 ns | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 26.59 mm | - |
| Length | - | 20.29 mm | - |
| Type | - | PolarHV HiPerFET Power MOSFET | - |
| Width | - | 5.31 mm | - |
| Forward Transconductance Min | - | 50 S | - |
| Fall Time | - | 26 ns | - |
| Typical Turn Off Delay Time | - | 110 ns | - |
| Typical Turn On Delay Time | - | 36 ns | - |