IXFB100N5

IXFB100N50Q3 vs IXFB100N50P vs IXFB100N50

 
PartNumberIXFB100N50Q3IXFB100N50PIXFB100N50
DescriptionMOSFET Q3Class HiPerFET Pwr MOSFET 500V/100AMOSFET 100 Amps 500V 0.05 Ohms Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePLUS-264-3PLUS-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance49 mOhms49 mOhms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge255 nC240 nC-
Pd Power Dissipation1.56 kW1.25 kW-
ConfigurationSingleSingle-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
SeriesIXFB100N50IXFB100N50-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYS-
Product TypeMOSFETMOSFET-
Rise Time250 ns29 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.056438 oz0.056438 oz-
Vgs th Gate Source Threshold Voltage-5 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Height-26.59 mm-
Length-20.29 mm-
Type-PolarHV HiPerFET Power MOSFET-
Width-5.31 mm-
Forward Transconductance Min-50 S-
Fall Time-26 ns-
Typical Turn Off Delay Time-110 ns-
Typical Turn On Delay Time-36 ns-
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXFB100N50Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
IXFB100N50P MOSFET 100 Amps 500V 0.05 Ohms Rds
IXFB100N50 Nuevo y original
IXFB100N50P MOSFET N-CH 500V 100A PLUS264
IXFB100N50Q3 MOSFET N-CH 500V 100A PLUS264
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