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IXFB100N50Q3

IXFB100N50Q3
Mfr. #:
IXFB100N50Q3
Fabricante:
Littelfuse
Descripción:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFB100N50Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB100N50Q3 DatasheetIXFB100N50Q3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFB100N50Q3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PLUS-264-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
49 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
255 nC
Pd - Disipación de energía:
1.56 kW
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFB100N50
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Tipo de producto:
MOSFET
Hora de levantarse:
250 ns
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Unidad de peso:
0.056438 oz
Tags
IXFB100N5, IXFB10, IXFB1, IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFB100N50Q3
DISTI # V99:2348_15877763		IXYS CorporationTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		25
  • 1:$17.5831
IXFB100N50Q3
DISTI # V36:1790_15877763		IXYS CorporationTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		0
  • 100:$22.8800
  • 25:$24.5300
  • 1:$28.3200
IXFB100N50Q3
DISTI # IXFB100N50Q3-ND		IXYS CorporationMOSFET N-CH 500V 100A PLUS264
RoHS: Compliant
Min Qty: 1
Container: Tube		9In Stock
  • 100:$24.5374
  • 25:$26.4012
  • 10:$28.7310
  • 1:$31.0600
IXFB100N50Q3
DISTI # 25894622		IXYS CorporationTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		25
  • 1:$17.5831
IXFB100N50Q3
DISTI # 747-IXFB100N50Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
RoHS: Compliant		14
  • 1:$31.0700
  • 5:$29.5200
  • 10:$28.7400
  • 25:$26.4100
  • 50:$25.2800
  • 100:$24.5400
  • 250:$22.5200
IXFB100N50Q3
DISTI # 8011364P		IXYS CorporationMOSFET NCH 500V 100A Q3 HIPERFET PLUS264, TU11
  • 25:£19.6200
  • 10:£20.3300
  • 5:£21.2800
IXFB100N50Q3
DISTI # 2674743		IXYS CorporationMOSFET, N-CH, 650V, 100A, PLUS264
RoHS: Compliant		0
  • 1000:$34.0900
  • 500:$34.6600
  • 250:$35.8600
  • 100:$37.1400
  • 10:$39.2400
  • 1:$40.0000
IXFB100N50Q3
DISTI # 2674743		IXYS CorporationMOSFET, N-CH, 650V, 100A, PLUS264
RoHS: Compliant		3
  • 100:£14.6400
  • 50:£15.4300
  • 10:£16.0700
  • 5:£18.0200
  • 1:£18.9600
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Disponibilidad
Valores:
14
En orden:
1997
Ingrese la cantidad:
El precio actual de IXFB100N50Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
31,07 US$
31,07 US$
5
29,52 US$
147,60 US$
10
28,74 US$
287,40 US$
25
26,41 US$
660,25 US$
50
25,28 US$
1 264,00 US$
100
24,54 US$
2 454,00 US$
250
22,52 US$
5 630,00 US$
500
21,44 US$
10 720,00 US$
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