PartNumber | IXFA4N100P | IXFA4N100 | IXFA4N100P TRL |
Description | MOSFET 4 Amps 1000V | ||
Manufacturer | IXYS | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 1 kV | - | - |
Id Continuous Drain Current | 4 A | - | - |
Rds On Drain Source Resistance | 3.3 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 6 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 26 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 150 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | - | - |
Packaging | Tube | - | - |
Height | 4.83 mm | - | - |
Length | 9.65 mm | - | - |
Series | IXFA4N100 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | Polar HiPerFET Power MOSFET | - | - |
Width | 10.41 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 1.8 S | - | - |
Fall Time | 50 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 36 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 37 ns | - | - |
Typical Turn On Delay Time | 24 ns | - | - |
Unit Weight | 0.056438 oz | - | - |