IXDH20N120D

IXDH20N120D1 vs IXDH20N120D vs IXDH20N120DI

 
PartNumberIXDH20N120D1IXDH20N120DIXDH20N120DI
DescriptionIGBT Transistors 20 Amps 1200V
ManufacturerIXYS--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.4 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C38 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXDH20N120--
PackagingTube--
Continuous Collector Current Ic Max50 A--
Height21.46 mm--
Length16.26 mm--
Operating Temperature Range- 55 C to + 150 C--
Width5.3 mm--
BrandIXYS--
Continuous Collector Current38 A--
Gate Emitter Leakage Current500 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.229281 oz--
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120D Nuevo y original
IXDH20N120DI Nuevo y original
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
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