IXBT1 stock, IXBT1, IXBT12N300HV


PartNumber	IXBT12N300HV	IXBT16N170A	IXBT10N170
Description	IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT	IGBT Transistors 1700V 16A	IGBT Transistors 10 Amps 1700V 2.3 Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-268-2	TO-268-3	TO-268-3
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	3 kV	1700 V	1.7 kV
Collector Emitter Saturation Voltage	2.8 V	-	3.4 V
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Continuous Collector Current at 25 C	30 A	-	20 A
Pd Power Dissipation	160 W	150 W	140 W
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	Very High Voltage	IXBT16N170	IXBT10N170
Packaging	Tube	Tube	Tube
Continuous Collector Current Ic Max	30 A	16 A	40 A
Brand	IXYS	IXYS	IXYS
Gate Emitter Leakage Current	+/- 100 nA	-	100 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	30	30	30
Subcategory	IGBTs	IGBTs	IGBTs
Tradename	BIMOSFET	BIMOSFET	BIMOSFET
Unit Weight	0.141096 oz	0.158733 oz	0.158733 oz
Height	-	5.1 mm	5.1 mm
Length	-	16.05 mm	16.05 mm
Width	-	14 mm	14 mm
Operating Temperature Range	-	-	- 55 C to + 150 C
Continuous Collector Current	-	-	20 A

Search Part Number : "IXBT1", Match & Start with "IXBT1" - Total : 10

Fabricante	Parte #	Descripción
Littelfuse	IXBT12N300HV	IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
	IXBT16N170A	IGBT Transistors 1700V 16A
	IXBT10N170	IGBT Transistors 10 Amps 1700V 2.3 Rds
	IXBT16N170AHV	IGBT Transistors DISC IGBT BIMOSFET-HIGH VOLT
	IXBT12N300	IGBT 3000V 30A 160W TO268
	IXBT16N170	Nuevo y original
	IXBT12N300HV	IGBT 3000V 30A 160W TO268
	IXBT16N170AHV	IGBT
	IXBT10N170	IGBT Transistors 10 Amps 1700V 2.3 Rds
	IXBT16N170A	IGBT Transistors 1700V 16A

IXBT1