IS66WVE1M16E

IS66WVE1M16EBLL-70BLI vs IS66WVE1M16EBLL-55BLI-TR vs IS66WVE1M16EBLL-55BLI

 
PartNumberIS66WVE1M16EBLL-70BLIIS66WVE1M16EBLL-55BLI-TRIS66WVE1M16EBLL-55BLI
DescriptionSRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHSSRAM 16Mb Pseudo SRAM Asynch/PageSRAM 16Mb Pseudo SRAM Asynch/Page
ManufacturerISSIISSIISSI, Integrated Silicon Solution Inc
Product CategorySRAMSRAMMemory
RoHSYY-
Memory Size16 Mbit-16M (1M x 16)
Organization1 M x 16--
Access Time70 ns--
Interface TypeParallel--
Supply Voltage Max3.6 V--
Supply Voltage Min2.7 V--
Supply Current Max30 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseTFBGA-48--
Memory TypeSDR-PSRAM (Pseudo)
SeriesIS66WVE1M16EBLL--
TypeAsynchronous--
BrandISSIISSI-
Moisture SensitiveYesYes-
Product TypeSRAMSRAM-
Factory Pack Quantity4802500-
SubcategoryMemory & Data StorageMemory & Data Storage-
Packaging-ReelTray Alternate Packaging
Package Case--48-TFBGA
Operating Temperature---40°C ~ 85°C (TA)
Interface--Parallel
Voltage Supply--2.7 V ~ 3.6 V
Supplier Device Package--48-TFBGA (6x8)
Speed--55ns
Format Memory--RAM
Fabricante Parte # Descripción RFQ
ISSI
ISSI
IS66WVE1M16EBLL-70BLI-TR SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-70BLI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-55BLI-TR SRAM 16Mb Pseudo SRAM Asynch/Page
IS66WVE1M16EBLL-70BLI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-55BLI SRAM 16Mb Pseudo SRAM Asynch/Page
Top