IS66WVE1

IS66WVE1M16BLL-55BLI-TR vs IS66WVE1M16EBLL-55BLI-TR vs IS66WVE1M16BLL-55BLI

 
PartNumberIS66WVE1M16BLL-55BLI-TRIS66WVE1M16EBLL-55BLI-TRIS66WVE1M16BLL-55BLI
DescriptionSRAM 16Mb 1M x 16 55ns Pseudo SRAMSRAM 16Mb Pseudo SRAM Asynch/PageSRAM 16Mb 1M x 16 55ns Pseudo SRAM
ManufacturerISSIISSIISSI
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size16 Mbit-16 Mbit
Organization1 M x 16-1 M x 16
Access Time55 ns-55 ns
Supply Voltage Max3.6 V-3.6 V
Supply Voltage Min2.7 V-2.7 V
Supply Current Max35 mA-35 mA
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 85 C-+ 85 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseBGA-48-BGA-48
PackagingReelReelTray
Memory TypePsuedo-Psuedo
SeriesIS66WVE1M16BLL-IS66WVE1M16BLL
BrandISSIISSIISSI
Product TypeSRAMSRAMSRAM
Factory Pack Quantity25002500480
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Moisture Sensitive-YesYes
Fabricante Parte # Descripción RFQ
ISSI
ISSI
IS66WVE1M16EBLL-70BLI-TR SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-70BLI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16BLL-55BLI-TR SRAM 16Mb 1M x 16 55ns Pseudo SRAM
IS66WVE1M16EBLL-55BLI-TR SRAM 16Mb Pseudo SRAM Asynch/Page
IS66WVE1M16BLL-55BLI SRAM 16Mb 1M x 16 55ns Pseudo SRAM
IS66WVE1M16EBLL-70BLI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16BLL-55BLI SRAM 16Mb 1M x 16 55ns Pseudo SRAM
IS66WVE1M16EBLL-55BLI SRAM 16Mb Pseudo SRAM Asynch/Page
IS66WVE1M16BLL-70BLI IC PSRAM 16M PARALLEL 48TFBGA
IS66WVE1M16TCLL-70BLI Nuevo y original
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