IRL530NST

IRL530NSTRLPBF vs IRL530NSTRL vs IRL530NSTRR

 
PartNumberIRL530NSTRLPBFIRL530NSTRLIRL530NSTRR
DescriptionMOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageMOSFET N-CH 100V 17A D2PAKMOSFET N-CH 100V 17A D2PAK
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseD2PAK-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance150 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22.7 nC--
Pd Power Dissipation3.8 W--
ConfigurationSingle-Single
PackagingReel-Reel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesSP001568266--
Unit Weight0.139332 oz-0.079014 oz
Package Case--D2PAK-3
Pd Power Dissipation--3.8 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--26 ns
Rise Time--53 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--17 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--1 V to 2 V
Rds On Drain Source Resistance--150 mOhms
Typical Turn Off Delay Time--30 ns
Typical Turn On Delay Time--7.2 ns
Qg Gate Charge--22.7 nC
Forward Transconductance Min--7.7 S
Channel Mode--Enhancement
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRL530NSTRLPBF MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Infineon Technologies
Infineon Technologies
IRL530NSTRRPBF MOSFET N-CH 100V 17A D2PAK
IRL530NSTRL MOSFET N-CH 100V 17A D2PAK
IRL530NSTRLPBF MOSFET N-CH 100V 17A D2PAK
IRL530NSTRR MOSFET N-CH 100V 17A D2PAK
IRL530NSTRLPBF-CUT TAPE Nuevo y original
IRL530NSTRPBF Nuevo y original
IRL530NSTR Nuevo y original
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