PartNumber | IRL530NSTRLPBF | IRL530NSTRL | IRL530NSTRR |
Description | MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | MOSFET N-CH 100V 17A D2PAK | MOSFET N-CH 100V 17A D2PAK |
Manufacturer | Infineon | IR | IR |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | D2PAK-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 17 A | - | - |
Rds On Drain Source Resistance | 150 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 22.7 nC | - | - |
Pd Power Dissipation | 3.8 W | - | - |
Configuration | Single | - | Single |
Packaging | Reel | - | Reel |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001568266 | - | - |
Unit Weight | 0.139332 oz | - | 0.079014 oz |
Package Case | - | - | D2PAK-3 |
Pd Power Dissipation | - | - | 3.8 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 26 ns |
Rise Time | - | - | 53 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 17 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 1 V to 2 V |
Rds On Drain Source Resistance | - | - | 150 mOhms |
Typical Turn Off Delay Time | - | - | 30 ns |
Typical Turn On Delay Time | - | - | 7.2 ns |
Qg Gate Charge | - | - | 22.7 nC |
Forward Transconductance Min | - | - | 7.7 S |
Channel Mode | - | - | Enhancement |