PartNumber | IRL530NSTRLPBF | IRL530NSPBF | IRL530NSTRL |
Description | MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 100mOhms 22.7nC | MOSFET N-CH 100V 17A D2PAK |
Manufacturer | Infineon | IR | IR |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | D2PAK-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 17 A | - | - |
Rds On Drain Source Resistance | 150 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 22.7 nC | - | - |
Pd Power Dissipation | 3.8 W | - | - |
Configuration | Single | Single | - |
Packaging | Reel | Tube | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001568266 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 3.8 W | - |
Maximum Operating Temperature | - | + 175 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 26 ns | - |
Rise Time | - | 53 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 17 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Rds On Drain Source Resistance | - | 150 mOhms | - |
Typical Turn Off Delay Time | - | 30 ns | - |
Typical Turn On Delay Time | - | 7.2 ns | - |
Qg Gate Charge | - | 22.7 nC | - |
Forward Transconductance Min | - | 7.7 S | - |
Channel Mode | - | Enhancement | - |