IRG4PF

IRG4PF50WPBF vs IRG4PF50WDPBF vs IRG4PF50WD-201P

 
PartNumberIRG4PF50WPBFIRG4PF50WDPBFIRG4PF50WD-201P
DescriptionIGBT Transistors 900V Warp 20-100kHzIGBT Transistors 900V Warp 20-100kHzIGBT 900V 51A 200W TO247AC
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max900 V900 V-
Collector Emitter Saturation Voltage2.25 V2.25 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C51 A51 A-
Pd Power Dissipation200 W200 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTubeTube-
Continuous Collector Current Ic Max51 A51 A-
Height20.7 mm20.7 mm-
Length15.87 mm15.87 mm-
Width5.31 mm5.31 mm-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity400400-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001533582SP001547862-
Unit Weight1.340411 oz1.340411 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRG4PF50WPBF IGBT Transistors 900V Warp 20-100kHz
IRG4PF50WDPBF IGBT Transistors 900V Warp 20-100kHz
IRG4PF50WD-201P IGBT 900V 51A 200W TO247AC
IRG4PF50WDPBF IGBT Transistors 900V Warp 20-100kHz
IRG4PF50WPBF IGBT Transistors 900V Warp 20-100kHz
IRG4PF50W IGBT Transistor, N-CHAN, TO-247AC
IRG4PF50WD Nuevo y original
IRG4PF50WDPBF,G4PF50WD,I Nuevo y original
IRG4PF50WDPBF,IRG4PF50WD Nuevo y original
IRG4PF50WDPBF-T Nuevo y original
IRG4PF50WDPBF. Nuevo y original
IRG4PF50WPB Nuevo y original
IRG4PF50WPBF,G4PF50W,IRG Nuevo y original
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