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IRG4PF50WPBF

IRG4PF50WPBF
Mfr. #:
IRG4PF50WPBF
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 900V Warp 20-100kHz
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRG4PF50WPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRG4PF50WPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
900 V
Voltaje de saturación colector-emisor:
2.25 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
51 A
Pd - Disipación de energía:
200 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
51 A
Altura:
20.7 mm
Longitud:
15.87 mm
Ancho:
5.31 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
400
Subcategoría:
IGBT
Parte # Alias:
SP001533582
Unidad de peso:
1.340411 oz
Tags
IRG4PF50WP, IRG4PF, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 25, Infineon IRG4PF50WPBF IGBT, 51 A 900 V, 3-Pin TO-247AC
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PF50WPBF Series 900 V 28 A N-Channel Latest Technology IGBT - TO-247AC
***ernational Rectifier
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package
***ical
Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC
***ied Electronics & Automation
900V WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
***eco
900V 51A WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC<AZ
***ineon
Target Applications: Pump; Refridgeration
***ronik
IGBT TO-247 RoHSconf
***i-Key
IGBT WARP 900V 51A TO247AC
*** Source Electronics
IGBT 900V 51A 200W TO247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***nell
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:900V; Current Ic Continuous a Max:51A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:900V; Current, Icm Pulsed:204A; Device Marking:IRG4PF50WPBF; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:220ns; Time, Fall Max:220ns; Time, Rise:26ns; Transistors, No. of:1
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Parte # Mfg. Descripción Valores Precio
IRG4PF50WPBF
DISTI # V99:2348_13892015		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		2095
  • 1000:$4.3860
  • 500:$5.0400
  • 100:$5.6740
  • 25:$6.6520
  • 1:$8.4733
IRG4PF50WPBF
DISTI # V36:1790_13892015		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		0
  • 1000:$3.5960
  • 500:$4.0890
  • 100:$4.6360
  • 25:$5.2760
  • 1:$6.0260
IRG4PF50WPBF
DISTI # IRG4PF50WPBF-ND		Infineon Technologies AGIGBT 900V 51A 200W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		727In Stock
  • 1000:$3.8511
  • 500:$4.4216
  • 100:$5.0777
  • 25:$5.8480
  • 1:$6.7900
IRG4PF50WPBF
DISTI # 32333330		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		9612
  • 2500:$3.4947
  • 1000:$3.6234
  • 500:$4.1679
  • 250:$4.5639
  • 100:$4.7817
  • 25:$5.5143
  • 10:$5.7816
  • 4:$6.3954
IRG4PF50WPBF
DISTI # 27012185		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		2095
  • 1000:$4.3860
  • 500:$5.0400
  • 100:$5.6740
  • 25:$6.6520
  • 2:$7.7030
IRG4PF50WPBF
DISTI # SP001533582		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: SP001533582)
RoHS: Compliant
Min Qty: 1		Europe - 405
  • 1000:€2.6900
  • 500:€2.8900
  • 100:€2.9900
  • 50:€3.0900
  • 25:€3.1900
  • 10:€3.3900
  • 1:€3.6900
IRG4PF50WPBF
DISTI # IRG4PF50WPBF		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRG4PF50WPBF)
RoHS: Compliant
Min Qty: 104
Container: Bulk		Americas - 0
  • 1040:$2.9900
  • 520:$3.0900
  • 312:$3.1900
  • 208:$3.2900
  • 104:$3.4900
IRG4PF50WPBF
DISTI # IRG4PF50WPBF		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PF50WPBF)
RoHS: Compliant
Min Qty: 400		Asia - 0
  • 20000:$3.2422
  • 10000:$3.2837
  • 4000:$3.3264
  • 2000:$3.3701
  • 1200:$3.4612
  • 800:$3.5574
  • 400:$3.6590
IRG4PF50WPBF
DISTI # IRG4PF50WPBF		Infineon Technologies AGTrans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PF50WPBF)
RoHS: Compliant
Min Qty: 400
Container: Tube		Americas - 0
  • 4000:$3.1900
  • 2400:$3.2900
  • 1600:$3.3900
  • 800:$3.4900
  • 400:$3.5900
IRG4PF50WPBF
DISTI # 38K2941		Infineon Technologies AGIGBT Single Transistor, 51 A, 2.7 V, 200 W, 900 V, TO-247AC, 3 RoHS Compliant: Yes0
  • 500:$4.2500
  • 250:$4.6600
  • 100:$4.8800
  • 50:$5.2500
  • 25:$5.6300
  • 10:$5.9000
  • 1:$6.5200
IRG4PF50WPBF
DISTI # 70017078		Infineon Technologies AG900V Warp 20-100 kHz Discrete IGBT IN A TO-247AC Package
RoHS: Compliant		310
  • 1:$9.7300
  • 10:$8.5800
  • 100:$7.4900
  • 500:$6.4900
  • 1000:$5.7200
IRG4PF50WPBF
DISTI # 942-IRG4PF50WPBF		Infineon Technologies AGIGBT Transistors 900V Warp 20-100kHz
RoHS: Compliant		367
  • 1:$6.4600
  • 10:$5.8400
  • 25:$5.5700
  • 100:$4.8300
  • 250:$4.6100
  • 500:$4.2100
  • 1000:$3.6600
IRG4PF50WPBFInternational RectifierInsulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		1788
  • 1000:$3.1800
  • 500:$3.3500
  • 100:$3.4900
  • 25:$3.6400
  • 1:$3.9200
IRG4PF50WPBF
DISTI # 5412060		Infineon Technologies AGTRANSISTOR IGBT N-CH 900V 51A TO247AC, EA2195
  • 5:£2.6900
  • 1:£2.7500
IRG4PF50WPBFInternational Rectifier 22
    IRG4PF50W
    DISTI # IRG4PF50WPBF    		Infineon Technologies AGTransistor: IGBT,900V,28A,200W,TO247-350
    • 1:$6.1600
    • 3:$5.5400
    • 10:$4.7300
    • 50:$4.2500
    IRG4PF50WPBF
    DISTI # 8650659    		Infineon Technologies AGIGBT, 900V, 51A, TO-247AC
    RoHS: Compliant    		70
    • 500:$6.4700
    • 250:$7.0900
    • 100:$7.4300
    • 25:$8.5600
    • 10:$8.9800
    • 1:$9.9400
    IRG4PF50WPBF
    DISTI # 8650659    		Infineon Technologies AGIGBT, 900V, 51A, TO-247AC0
    • 100:£3.7700
    • 50:£4.0500
    • 10:£4.3300
    • 5:£5.0300
    • 1:£5.5300
    IRG4PF50WPBF
    DISTI # XSKDRABS0026534    		Infineon Technologies AG 
    RoHS: Compliant    		255 in Stock0 on Order
    • 255:$4.7280
    • 175:$5.0640
    IRG4PF50WPBF
    DISTI # IGBT1767    		Infineon Technologies AGIGBT TO-247
    RoHS: Compliant    		Stock DE - 1225Stock HK - 0Stock US - 0
    • 25:$4.1400
    • 75:$3.8900
    • 125:$3.8300
    • 225:$3.7600
    • 400:$3.5400
    IRG4PF50WPBF
    DISTI # IRG4PF50WPBF    		Infineon Technologies AG900V 51A 200W TO 247AC
    RoHS: Compliant    		900
    • 5:€4.0500
    • 25:€3.4500
    • 100:€3.1500
    • 200:€2.8800
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    Disponibilidad
    Valores:
    368
    En orden:
    2351
    Ingrese la cantidad:
    El precio actual de IRG4PF50WPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,46 US$
    6,46 US$
    10
    5,84 US$
    58,40 US$
    25
    5,57 US$
    139,25 US$
    100
    4,83 US$
    483,00 US$
    250
    4,61 US$
    1 152,50 US$
    500
    4,21 US$
    2 105,00 US$
    1000
    3,66 US$
    3 660,00 US$
    2500
    3,53 US$
    8 825,00 US$
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