 |  | | |
| PartNumber | IRFS23N15DTRLP | IRFS23N15D | IRFS23N20D |
| Description | MOSFET MOSFT 150V 23A 90mOhm 37nC | MOSFET N-CH 150V 23A D2PAK | MOSFET N-CH 200V 24A D2PAK |
| Manufacturer | Infineon | IR/VISHAY | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 23 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 8.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SP001557206 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFS23N15DTRLP | MOSFET MOSFT 150V 23A 90mOhm 37nC | |
| IRFS23N20DTRLP | MOSFET MOSFT 200V 24A 100mOhm 57nC | ||
| IRFS23N20DPBF | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | ||
| IRFS23N15DTRLP | Darlington Transistors MOSFET MOSFT 150V 23A 90mOhm 37nC | ||
| IRFS23N15D | MOSFET N-CH 150V 23A D2PAK | ||
| IRFS23N20D | MOSFET N-CH 200V 24A D2PAK | ||
| IRFS23N20DTRLP | MOSFET N-CH 200V 24A D2PAK | ||
| IRFS23N20DTRRP | RF Bipolar Transistors MOSFET 200V Single NChannel HEXFET Power MOSFET | ||
Infineon / IR |
IRFS23N20DTRRP | MOSFET 200V Single NChannel HEXFET Power MOSFET | |
| IRFS23N20DPBF | MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | ||
| IRFS23N20DTRLPBF | Nuevo y original | ||
| IRFS217 | Nuevo y original | ||
| IRFS22N60C3 | Nuevo y original | ||
| IRFS23N15DPBF | MOSFET, Power, N-Ch, VDSS 150V, RDS(ON) 0.09Ohm, ID 23A, D2Pak, PD 136W, VGS +/-30V, -55 | ||
| IRFS23N15DTRLPBF | Nuevo y original | ||
| IRFS23N20DTRR | Nuevo y original | ||
| IRFS23N20DTRRPBF | Nuevo y original | ||
| IRFS240B | Power Field-Effect Transistor, 12.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFS2453DPBF | Nuevo y original | ||
| IRFS250 | Nuevo y original | ||
| IRFS250B | Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFS250BFP001 | Nuevo y original | ||
| IRFS254BFP001 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |