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IRFS23N15DPBF

IRFS23N15DPBF
Mfr. #:
IRFS23N15DPBF
Fabricante:
Infineon Technologies AG
Descripción:
MOSFET, Power, N-Ch, VDSS 150V, RDS(ON) 0.09Ohm, ID 23A, D2Pak, PD 136W, VGS +/-30V, -55
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFS23N15DPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IRFS23N1, IRFS23, IRFS2, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 0.09Ohm,ID 23A,D2Pak,PD 136W,VGS+/-30V,-55C
***ical
Trans MOSFET N-CH 150V 23A 3-Pin (2+Tab) D2PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFS23N20DPBF N-channel MOSFET Transistor; 24 A; 200 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 200 V 3.8 W 57 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N, 200V, 24A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power D
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
N-Channel Power MOSFET, UniFETTM, 300V, 28A, 129mΩ, D2PAK
***ure Electronics
N-Channel 300 V 0.129 Ohm Surface Mount UniFET Mosfet - D2PAK-3
*** Source Electronics
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 300V 28A D2PAK
***ment14 APAC
N CHANNEL MOSFET, 300V, 28A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:300V; On Resistance Rds(on):108mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
***nell
MOSFET, N-CH, 300V, 28A, TO-263AB-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263AB; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
*** Source Electronics
Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 22A D2PAK
***emi
P-Channel MOSFET, QFET® -100V, -22A, 125mΩ
***ure Electronics
P-Channel 100 V 22 A 125 mOhm Surface Mount Q-FET Mosfet - D2PAK
***Yang
Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (A
***roFlash
Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***nell
MOSFET, P CH, -100V, -22A, TO-263AB-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.096ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.75W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Current Id Max: 15.6mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 88A; Rate of Voltage Change dv / dt: 6V/ns; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
***emi
N-Channel Power MOSFET, QFET®, 200 V, 19 A, 170 mΩ, D2PAK
***ure Electronics
N-Channel 200 V 0.17 Ohm Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 600V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRFS23N15DPBF
DISTI # 70017264		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 150V,RDS(ON) 0.09Ohm,ID 23A,D2Pak,PD 136W,VGS +/-30V,-55
RoHS: Compliant		0
  • 450:$1.2000
Imagen Parte # Descripción
IRFS23N15DTRLP

Mfr.#: IRFS23N15DTRLP

OMO.#: OMO-IRFS23N15DTRLP

 MOSFET MOSFT 150V 23A 90mOhm 37nC
IRFS23N20DTRLP

Mfr.#: IRFS23N20DTRLP

OMO.#: OMO-IRFS23N20DTRLP

 MOSFET MOSFT 200V 24A 100mOhm 57nC
IRFS23N20DTRRP

Mfr.#: IRFS23N20DTRRP

OMO.#: OMO-IRFS23N20DTRRP

 MOSFET 200V Single NChannel HEXFET Power MOSFET
IRFS23N20DPBF

Mfr.#: IRFS23N20DPBF

OMO.#: OMO-IRFS23N20DPBF

 MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC
IRFS23N20DPBF

Mfr.#: IRFS23N20DPBF

OMO.#: OMO-IRFS23N20DPBF-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC
IRFS23N15DTRLP

Mfr.#: IRFS23N15DTRLP

OMO.#: OMO-IRFS23N15DTRLP-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET MOSFT 150V 23A 90mOhm 37nC
IRFS23N15D

Mfr.#: IRFS23N15D

OMO.#: OMO-IRFS23N15D-INFINEON-TECHNOLOGIES

 MOSFET N-CH 150V 23A D2PAK
IRFS23N20DTRLP

Mfr.#: IRFS23N20DTRLP

OMO.#: OMO-IRFS23N20DTRLP-INFINEON-TECHNOLOGIES

 MOSFET N-CH 200V 24A D2PAK
IRFS23N20DTRRPBF

Mfr.#: IRFS23N20DTRRPBF

OMO.#: OMO-IRFS23N20DTRRPBF-1190

 Nuevo y original
IRFS23N20DTRRP

Mfr.#: IRFS23N20DTRRP

OMO.#: OMO-IRFS23N20DTRRP-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET 200V Single NChannel HEXFET Power MOSFET
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IRFS23N15DPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,80 US$
1,80 US$
10
1,71 US$
17,10 US$
100
1,62 US$
162,00 US$
500
1,53 US$
765,00 US$
1000
1,44 US$
1 440,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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