IRFR3410TRP

IRFR3410TRPBF vs IRFR3410TRPBF-CUT TAPE vs IRFR3410TRPBF,IRFR3410,

 
PartNumberIRFR3410TRPBFIRFR3410TRPBF-CUT TAPEIRFR3410TRPBF,IRFR3410,
DescriptionMOSFET 100V SINGLE N-CH 39mOhms 37nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current31 A--
Rds On Drain Source Resistance39 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge37 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min33 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time27 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesSP001578202--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRFR3410TRPBF MOSFET 100V SINGLE N-CH 39mOhms 37nC
IRFR3410TRPBF MOSFET N-CH 100V 31A DPAK
IRFR3410TRPBF-CUT TAPE Nuevo y original
IRFR3410TRPBF,IRFR3410, Nuevo y original
IRFR3410TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:31A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.034ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
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