PartNumber | IRFR3410TRLPBF | IRFR3410TRPBF | IRFR3410PBF |
Description | MOSFET MOSFT 100V 31A 39mOhm 37nC | MOSFET 100V SINGLE N-CH 39mOhms 37nC | MOSFET N-CH 100V 31A DPAK |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 31 A | 31 A | - |
Rds On Drain Source Resistance | 34 mOhms | 39 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 37 nC | 37 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 110 W | 110 W | - |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Tube |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon / IR | Infineon Technologies | - |
Forward Transconductance Min | 33 S | 33 S | - |
Fall Time | 13 ns | 13 ns | 13 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 27 ns | 27 ns | 27 ns |
Factory Pack Quantity | 3000 | 2000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 40 ns | 40 ns | 40 ns |
Typical Turn On Delay Time | 12 ns | 12 ns | 12 ns |
Part # Aliases | SP001572792 | SP001578202 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Channel Mode | - | Enhancement | Enhancement |
Type | - | HEXFET Power MOSFET | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 110 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 31 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 39 mOhms |
Qg Gate Charge | - | - | 37 nC |
Forward Transconductance Min | - | - | 33 S |