IRFH5020

IRFH5020TRPBF vs IRFH5020TR2PBF vs IRFH5020TRPBF,5020,IR502

 
PartNumberIRFH5020TRPBFIRFH5020TR2PBFIRFH5020TRPBF,5020,IR502
DescriptionMOSFET 200V 1 N-CH HEXFET 55mOhms 11nCMOSFET MOSFT 200V 41A 59mOhm 36nC Qg
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8PQFN-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current34 A5.1 A-
Rds On Drain Source Resistance55 mOhms55 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge11 nC36 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.6 W3.6 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Height0.83 mm0.83 mm-
Length6 mm6 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandInfineon / IRInfineon / IR-
Fall Time6 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time7.7 ns7.7 ns-
Factory Pack Quantity4000400-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time9.3 ns--
Part # AliasesSP001575478SP001556316-
Vgs th Gate Source Threshold Voltage-5 V-
Forward Transconductance Min-18 S-
Unit Weight-0.070548 oz-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRFH5020TRPBF MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC
IRFH5020TR2PBF MOSFET MOSFT 200V 41A 59mOhm 36nC Qg
IRFH5020TRPBF-CUT TAPE Nuevo y original
IRFH5020TRPBF,5020,IR502 Nuevo y original
IRFH5020TRPBF. Nuevo y original
Infineon Technologies
Infineon Technologies
IRFH5020TR2PBF MOSFET N-CH 200V 5.1A 8PQFN
IRFH5020TRPBF MOSFET N-CH 200V 5.1A 8PQFN
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