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IRFH5020TR2PBF

IRFH5020TR2PBF
Mfr. #:
IRFH5020TR2PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 200V 41A 59mOhm 36nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH5020TR2PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
5.1 A
Rds On - Resistencia de la fuente de drenaje:
55 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
36 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.6 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.83 mm
Longitud:
6 mm
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
18 S
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.7 ns
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Parte # Alias:
SP001556316
Unidad de peso:
0.070548 oz
Tags
IRFH5020, IRFH502, IRFH50, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
***et
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R
***ment14 APAC
MOSFET, N CH, 200V, 41A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Power Dissipation Pd:8.3W; Voltage Vgs Max:20V
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***ure Electronics
Single N-Channel 250 V 100 mOhm 37 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
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RF Bipolar Transistors MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN
***et
Trans MOSFET N-CH 250V 3.8A 8-Pin PQFN T/R
***ark
N-CHANNEL MOSFET, 250V, 32A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:20V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 250V, 25A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.084ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET; N-Channel; 150V; 56A; 31 mOhm; 33 nC Qg; PQFN
*** Source Electronics
Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R / MOSFET N-CH 150V 10A 8VQFN
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 150 V 58 mOhm 21 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ment14 APAC
N CH MOSFET, 150V, 5A, 8-PQFN; Transisto; N CH MOSFET, 150V, 5A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:8
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
***ment14 APAC
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
IRFH5020TR2PBF
DISTI # IRFH5020TR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFH5020TR2PBF
    DISTI # IRFH5020TR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFH5020TR2PBF
      DISTI # 70019254      		Infineon Technologies AGMOSFET,N-Channel,200V,41A,59 mOhm,36 nC Qg,PQFN
      RoHS: Compliant      		0
      • 400:$1.9700
      • 800:$1.9310
      • 2000:$1.8720
      • 4000:$1.7930
      • 10000:$1.6750
      IRFH5020TR2PBF
      DISTI # 942-IRFH5020TR2PBF      		Infineon Technologies AGMOSFET MOSFT 200V 41A 59mOhm 36nC Qg
      RoHS: Compliant      		0
        Imagen Parte # Descripción
        IRFH5020TRPBF

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        OMO.#: OMO-IRFH5020TRPBF

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        Mfr.#: IRFH5025TRPBF

        OMO.#: OMO-IRFH5025TRPBF

        		 MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN
        IRFH5025TR2PBF

        Mfr.#: IRFH5025TR2PBF

        OMO.#: OMO-IRFH5025TR2PBF

        		 MOSFET MOSFT 250V 31A 104mOhm 36nC Qg
        IRFH5020TR2PBF

        Mfr.#: IRFH5020TR2PBF

        OMO.#: OMO-IRFH5020TR2PBF

        		 MOSFET MOSFT 200V 41A 59mOhm 36nC Qg
        IRFH5020TRPBF-CUT TAPE

        Mfr.#: IRFH5020TRPBF-CUT TAPE

        OMO.#: OMO-IRFH5020TRPBF-CUT-TAPE-1190

        		 Nuevo y original
        IRFH5020TR2PBF

        Mfr.#: IRFH5020TR2PBF

        OMO.#: OMO-IRFH5020TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 200V 5.1A 8PQFN
        IRFH5020TRPBF

        Mfr.#: IRFH5020TRPBF

        OMO.#: OMO-IRFH5020TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 200V 5.1A 8PQFN
        IRFH5020TRPBF,5020,IR502

        Mfr.#: IRFH5020TRPBF,5020,IR502

        OMO.#: OMO-IRFH5020TRPBF-5020-IR502-1190

        		 Nuevo y original
        IRFH5020TRPBF.

        Mfr.#: IRFH5020TRPBF.

        OMO.#: OMO-IRFH5020TRPBF--1190

        		 Nuevo y original
        IRFH5025TRPBF

        Mfr.#: IRFH5025TRPBF

        OMO.#: OMO-IRFH5025TRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN
        Disponibilidad
        Valores:
        Available
        En orden:
        3000
        Ingrese la cantidad:
        El precio actual de IRFH5020TR2PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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