PartNumber | IRFD220PBF | IRFD220PBF,IRFD220 | IRFD220PBF. |
Description | MOSFET N-CH 200V HEXFET MOSFET HEXDI | N CHANNEL MOSFET, 200V, 800mA, HD-1, Transistor Polarity:N Channel, Continuous Drain Current Id:800mA, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V, | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | HVMDIP-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 800 mA | - | - |
Rds On Drain Source Resistance | 800 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 14 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | IRFD | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 0.6 S | - | - |
Fall Time | 13 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 22 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 19 ns | - | - |
Typical Turn On Delay Time | 7.2 ns | - | - |