IRFD22

IRFD220PBF vs IRFD224 vs IRFD220

 
PartNumberIRFD220PBFIRFD224IRFD220
DescriptionMOSFET N-CH 200V HEXFET MOSFET HEXDIMOSFET N-CH 250V 630MA 4-DIPMOSFET N-CH 200V 800MA 4-DIP
ManufacturerVishay-IR
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseHVMDIP-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current800 mA--
Rds On Drain Source Resistance800 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesIRFD--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min0.6 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time7.2 ns--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
IRFD224PBF MOSFET N-Chan 250V 0.63 Amp
IRFD220PBF MOSFET N-CH 200V HEXFET MOSFET HEXDI
Vishay
Vishay
IRFD224 MOSFET N-CH 250V 630MA 4-DIP
IRFD224PBF MOSFET N-CH 250V 630MA 4-DIP
IRFD220 MOSFET N-CH 200V 800MA 4-DIP
IRFD220PBF MOSFET N-CH 200V 800MA 4-DIP
IRFD220119 Nuevo y original
IRFD220(94-2188) Nuevo y original
IRFD220(TSTDTS) Nuevo y original
IRFD220PBF,IRFD220 Nuevo y original
IRFD220PBF. N CHANNEL MOSFET, 200V, 800mA, HD-1, Transistor Polarity:N Channel, Continuous Drain Current Id:800mA, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V,
IRFD221 Nuevo y original
IRFD221PBF Nuevo y original
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