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IRF821

IRF821 vs IRF8217 vs IRF821G

 
PartNumberIRF821IRF8217IRF821G
DescriptionPower Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fabricante Parte # Descripción RFQ
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF8217 Nuevo y original
IRF821G Nuevo y original
IRF821PBF Nuevo y original
IRF821TRPBF Nuevo y original
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