IRF7807V

IRF7807VD1PBF vs IRF7807VD1TRPBF. vs IRF7807V

 
PartNumberIRF7807VD1PBFIRF7807VD1TRPBF.IRF7807V
DescriptionMOSFET FETKY 30V VBRDSS 25mOhms 9.5nC
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8.3 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
TypeFETKY MOSFET & Schottky Diode--
Width3.9 mm--
BrandInfineon / IR--
Fall Time2.2 ns--
Product TypeMOSFET--
Rise Time1.2 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 ns--
Typical Turn On Delay Time6.3 ns--
Part # AliasesSP001551528--
Unit Weight0.019048 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF7807VTRPBF MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC
IRF7807VD2PBF MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC
IRF7807VD1PBF MOSFET FETKY 30V VBRDSS 25mOhms 9.5nC
IRF7807VD1TRPBF. Nuevo y original
IRF7807VD2TRPBF. Nuevo y original
IRF7807V Nuevo y original
IRF7807VPBF-1 Nuevo y original
Infineon Technologies
Infineon Technologies
IRF7807VD1PBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2 MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2PBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2TR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1 MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1TR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1TRPBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VPBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VTR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VTRPBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2TRPBF IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC
Top