IRF7509T

IRF7509TRPBF vs IRF7509TR vs IRF7509TRPBF,IRF7509PBF,F7509

 
PartNumberIRF7509TRPBFIRF7509TRIRF7509TRPBF,IRF7509PBF,F7509
DescriptionMOSFET MOSFT DUAL N/PCh 30V 2.4A Micro 8MOSFET N/P-CH 30V 2.7A/2A MICRO8
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicro-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.7 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.8 nC, 7.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelCut Tape (CT)-
Height1.11 mm--
Length3 mm--
Transistor Type1 N-Channel, 1 P-Channel--
Width3 mm--
BrandInfineon / IR--
Forward Transconductance Min1.9 S, 0.92 S--
Fall Time5.3 ns, 9.3 ns--
Product TypeMOSFET--
Rise Time10 ns, 12 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns, 19 ns--
Typical Turn On Delay Time4.7 ns, 9.7 ns--
Part # AliasesSP001570444--
Unit Weight0.000901 oz--
Series-*-
Package Case-8-TSSOP, 8-MSOP (0.118", 3.00mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-Micro8-
FET Type-N and P-Channel-
Power Max-1.25W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-210pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-2.7A, 2A-
Rds On Max Id Vgs-110 mOhm @ 1.7A, 10V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs-12nC @ 10V-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF7509TRPBF MOSFET MOSFT DUAL N/PCh 30V 2.4A Micro 8
IRF7509TRPBF-CUT TAPE Nuevo y original
IRF7509TRPBF,IRF7509PBF,F7509 Nuevo y original
Infineon Technologies
Infineon Technologies
IRF7509TR MOSFET N/P-CH 30V 2.7A/2A MICRO8
IRF7509TRPBF MOSFET N/P-CH 30V 2.7A/2A MICRO8
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