| PartNumber | IRF7490TRPBF | IRF7492TRPBF | IRF7492PBF |
| Description | MOSFET MOSFT 100V 5.4A 39mOhm 37nC | MOSFET MOSFT 200V 3.7A 79mOhm 39nC Qg | MOSFET 200V 1 N-CH HEXFET 79mOhms 39nC |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 200 V | 200 V |
| Id Continuous Drain Current | 5.4 A | 3.7 A | 3.7 A |
| Rds On Drain Source Resistance | 39 mOhms | 79 mOhms | 79 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 37 nC | 39 nC | 39 nC |
| Pd Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SP001563766 | SP001572102 | SP001554342 |
| Unit Weight | 0.019048 oz | 0.017870 oz | 0.019048 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Channel Mode | - | Enhancement | Enhancement |
| Forward Transconductance Min | - | 7.9 S | - |
| Fall Time | - | 14 ns | 14 ns |
| Rise Time | - | 13 ns | 13 ns |
| Typical Turn Off Delay Time | - | 27 ns | 27 ns |
| Typical Turn On Delay Time | - | 15 ns | 15 ns |
| Type | - | - | HEXFET Power MOSFET |