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IRF7493TRPBF

IRF7493TRPBF
Mfr. #:
IRF7493TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 80V 9.3A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7493TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Carrete
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-8
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.2 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Resistencia a la fuente de desagüe de Rds
15 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
31 nC
Tags
IRF7493T, IRF7493, IRF749, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 9.3 A, 80 V, 8-Pin SOIC Infineon IRF7493PBF
***ure Electronics
Single N-Channel 80 V 15 mOhm 35 nC HEXFET® Power Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
***C
Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC
***ical
Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Tube
***ernational Rectifier
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***p One Stop Global
Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC
***eco
80 Volt Single N Channel HEXFET Power MOSFET
***th Star Micro
MOSFET N-CH 80V 9.3A 8-SOIC
***trelec
MOSFET SO-8 N 80V 7.4 A
***ark
Trench_Mosfets Rohs Compliant: Yes
***ronik
N-CH 80V 9,2A 15mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***ukat
N-Ch 80V 9,3A 2,5W 0,015R SO8
***ment14 APAC
Prices include import duty and tax. MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:9.3A; Fall Time tf:12ns; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm:74A; Rise Time:7.5ns; Termination Type:Surface Mount Device; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, SO-8; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:80V; Rezystancja przewodzenia Rds(on):0.015ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:2.5W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Czas narastania:7.5ns; Czas opadania tf:12ns; Konfiguracja pinów:(1+2+3)S,4G, (8+7+6+5)D; Liczba tranzystorów:1; Maks. prąd Id:9.3A; Napięcie Vds, typ.:80V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Prąd impulsowy Idm:74A; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
Parte # Mfg. Descripción Valores Precio
IRF7493TRPBF
DISTI # IRF7493PBFCT-ND		Infineon Technologies AGMOSFET N-CH 80V 9.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		767In Stock
  • 1000:$0.6832
  • 500:$0.8654
  • 100:$1.1159
  • 10:$1.4120
  • 1:$1.5900
IRF7493TRPBF
DISTI # IRF7493PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 80V 9.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		767In Stock
  • 1000:$0.6832
  • 500:$0.8654
  • 100:$1.1159
  • 10:$1.4120
  • 1:$1.5900
IRF7493TRPBF
DISTI # IRF7493PBFTR-ND		Infineon Technologies AGMOSFET N-CH 80V 9.3A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.6191
IRF7493TRPBF
DISTI # IRF7493TRPBF		Infineon Technologies AGTrans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7493TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.4629
  • 8000:$0.4459
  • 16000:$0.4299
  • 24000:$0.4159
  • 40000:$0.4079
IRF7493TRPBF
DISTI # IRF7493TRPBF		Infineon Technologies AGTrans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R (Alt: IRF7493TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3829
  • 8000:$0.3722
  • 12000:$0.3622
  • 20000:$0.3526
  • 40000:$0.3481
  • 100000:$0.3436
  • 200000:$0.3392
IRF7493TRPBF-1
DISTI # IRF7493TRPBF-1		Infineon Technologies AGTrans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R (Alt: IRF7493TRPBF-1)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRF7493TRPBF
    DISTI # 13AC9202    		Infineon Technologies AGMOSFET, N-CH, 80V, 9.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes0
    • 1:$1.3200
    • 10:$1.1300
    • 25:$1.0400
    • 50:$0.9530
    • 100:$0.8650
    • 250:$0.8150
    • 500:$0.7640
    • 1000:$0.6030
    IRF7493TRPBF
    DISTI # 70017462    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 80V,RDS(ON) 11.5 Milliohms,ID 9.3A,SO-8,PD 2.5W,VGS +/-2
    RoHS: Compliant    		0
    • 4000:$1.6000
    IRF7493TRPBF
    DISTI # 942-IRF7493TRPBF    		Infineon Technologies AGMOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg
    RoHS: Compliant    		14
    • 1:$1.3200
    • 10:$1.1300
    • 100:$0.8650
    • 500:$0.7640
    • 1000:$0.6030
    • 4000:$0.5350
    IRF7493TRPBFInternational Rectifier9.3 A, 80 V, 0.015 OHM, N-CHANNEL, SI, POWER, MOSFET, MS-012AA, TandR, LEAD FREE132
    • 66:$0.8700
    • 18:$1.1600
    • 1:$1.7400
    IRF7493TRPBF
    DISTI # IRF7493TRPBF    		International Rectifier 
    RoHS: Compliant    		49950
    • 1:$1.0600
    • 500:$0.9000
    • 1000:$0.8200
    IRF7493TRPBF
    DISTI # 2725911    		Infineon Technologies AGMOSFET, N-CH, 80V, 9.3A, SOIC
    RoHS: Compliant    		100
    • 5:£0.9960
    • 25:£0.8180
    • 100:£0.6900
    • 250:£0.6500
    • 500:£0.6090
    IRF7493TRPBF
    DISTI # 2725911    		Infineon Technologies AGMOSFET, N-CH, 80V, 9.3A, SOIC
    RoHS: Compliant    		0
    • 1:$2.0900
    • 10:$1.7900
    • 100:$1.3700
    • 500:$1.2100
    • 1000:$0.9550
    • 4000:$0.8470
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    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de IRF7493TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,51 US$
    0,51 US$
    10
    0,48 US$
    4,83 US$
    100
    0,46 US$
    45,80 US$
    500
    0,43 US$
    216,25 US$
    1000
    0,41 US$
    407,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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