PartNumber | IRF6691TR1 | IRF6691TR1PBF | IRF6691TRPBF |
Description | MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC | MOSFET N-CH 20V 32A DIRECTFET | MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC |
Manufacturer | Infineon | IR | International Rectifier |
Product Category | MOSFET | IC Chips | Transistors - FETs, MOSFETs - Single |
RoHS | N | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | DirectFET-MT | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 32 A | - | - |
Rds On Drain Source Resistance | 1.8 mOhms | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 47 nC | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2.8 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | Reel |
Height | 0.7 mm | - | - |
Length | 6.35 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | HEXFET Power MOSFET plus Schottky Diode | - | - |
Width | 5.05 mm | - | - |
Brand | Infineon / IR | - | - |
Fall Time | 10 ns | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | - | - |
Rise Time | 95 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 23 ns | - | - |
Part # Aliases | SP001530888 | - | - |
Unit Weight | 0.017637 oz | - | - |
Package Case | - | - | DirectFET-3 |
Pd Power Dissipation | - | - | 2 W |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | 32 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 1.8 mOhms |
Qg Gate Charge | - | - | 47 nC |