IRF669

IRF6691TR1 vs IRF6691TR1PBF vs IRF6691TRPBF

 
PartNumberIRF6691TR1IRF6691TR1PBFIRF6691TRPBF
DescriptionMOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nCMOSFET N-CH 20V 32A DIRECTFETMOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
ManufacturerInfineonIRInternational Rectifier
Product CategoryMOSFETIC ChipsTransistors - FETs, MOSFETs - Single
RoHSN--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDirectFET-MT--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance1.8 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge47 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
Height0.7 mm--
Length6.35 mm--
Transistor Type1 N-Channel-1 N-Channel
TypeHEXFET Power MOSFET plus Schottky Diode--
Width5.05 mm--
BrandInfineon / IR--
Fall Time10 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time95 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time23 ns--
Part # AliasesSP001530888--
Unit Weight0.017637 oz--
Package Case--DirectFET-3
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--32 A
Vds Drain Source Breakdown Voltage--20 V
Rds On Drain Source Resistance--1.8 mOhms
Qg Gate Charge--47 nC
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6691TR1 MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
Infineon Technologies
Infineon Technologies
IRF6691TR1 MOSFET N-CH 20V 32A DIRECTFET
IRF6691TR1PBF MOSFET N-CH 20V 32A DIRECTFET
IRF6691TRPBF MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
IRF6691TRPBF. Nuevo y original
IRF6691TRPBF IRF6691TR1P Nuevo y original
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