IRF6626

IRF6626TR1PBF vs IRF6626TR1 vs IRF6626

 
PartNumberIRF6626TR1PBFIRF6626TR1IRF6626
DescriptionMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nCMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nCMOSFET N-CH 30V 16A DIRECTFET
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-STDirectFET-ST-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current16 A16 A-
Rds On Drain Source Resistance7.1 mOhms5.4 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge19 nC1.8 nC-
Pd Power Dissipation42 W2.2 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length4.85 mm4.85 mm-
Transistor Type1 N-Channel1 N-Channel-
Width3.95 mm3.95 mm-
BrandInfineon / IRInfineon / IR-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001530896SP001531662-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-DirectFET Power MOSFET-
Fall Time-4.5 ns-
Rise Time-15 ns-
Typical Turn Off Delay Time-17 ns-
Typical Turn On Delay Time-13 ns-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6626TR1PBF MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
IRF6626TRPBF MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
IRF6626TR1 MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
Infineon Technologies
Infineon Technologies
IRF6626 MOSFET N-CH 30V 16A DIRECTFET
IRF6626TRPBF MOSFET N-CH 30V 16A DIRECTFET
IRF6626TR1 MOSFET N-CH 30V 16A DIRECTFET
IRF6626TR1PBF MOSFET N-CH 30V 16A DIRECTFET
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