PartNumber | IRF6626TR1PBF | IRF6626TR1 | IRF6626 |
Description | MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC | MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC | MOSFET N-CH 30V 16A DIRECTFET |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | N | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | DirectFET-ST | DirectFET-ST | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 16 A | 16 A | - |
Rds On Drain Source Resistance | 7.1 mOhms | 5.4 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 19 nC | 1.8 nC | - |
Pd Power Dissipation | 42 W | 2.2 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | - |
Height | 0.7 mm | 0.7 mm | - |
Length | 4.85 mm | 4.85 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.95 mm | 3.95 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SP001530896 | SP001531662 | - |
Minimum Operating Temperature | - | - 40 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Type | - | DirectFET Power MOSFET | - |
Fall Time | - | 4.5 ns | - |
Rise Time | - | 15 ns | - |
Typical Turn Off Delay Time | - | 17 ns | - |
Typical Turn On Delay Time | - | 13 ns | - |