IRF6626TR1PBF

IRF6626TR1PBF
Mfr. #:
IRF6626TR1PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6626TR1PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6626TR1PBF DatasheetIRF6626TR1PBF Datasheet (P4-P6)IRF6626TR1PBF Datasheet (P7-P9)IRF6626TR1PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-ST
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
16 A
Rds On - Resistencia de la fuente de drenaje:
7.1 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
19 nC
Pd - Disipación de energía:
42 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.7 mm
Longitud:
4.85 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.95 mm
Marca:
Infineon / IR
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001530896
Tags
IRF6626T, IRF6626, IRF662, IRF66, IRF6, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET ST ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, 30V, ST; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:4mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:ST; Termination Type:SMD; Base Number:6626; Current, Idm Pulse:130A; Power Dissipation:2.2mW; SMD Marking:2.2; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V
Parte # Mfg. Descripción Valores Precio
IRF6626TR1PBF
DISTI # IRF6626TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6626TR1PBF
    DISTI # IRF6626TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6626TR1PBF
      DISTI # IRF6626TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6626TR1PBF
        DISTI # 70018834
        Infineon Technologies AG30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET ST PKG
        RoHS: Compliant
        0
        • 1000:$1.8500
        • 2000:$1.7000
        IRF6626TR1PBF
        DISTI # 942-IRF6626TR1PBF
        Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
        RoHS: Compliant
        0
          IRF6626TR1
          DISTI # 942-IRF6626TR1
          Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
          RoHS: Not compliant
          0
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            Disponibilidad
            Valores:
            Available
            En orden:
            3000
            Ingrese la cantidad:
            El precio actual de IRF6626TR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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