PartNumber | IRF6609TR1 | IRF6609TR1PBF | IRF6609TR1PBF. |
Description | MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC | MOSFET 20V N-CH HEXFET 2mOhms 46nC | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | N | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | DirectFET-MT | DirectFET-MT | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 31 A | 31 A | - |
Rds On Drain Source Resistance | 2.6 mOhms | 2.6 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 46 nC | 46 nC | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 89 W | 89 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Height | 0.7 mm | 0.7 mm | - |
Length | 6.35 mm | 6.35 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | HEXFET Power MOSFET | - | - |
Width | 5.05 mm | 5.05 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Fall Time | 9.8 ns | - | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 95 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 26 ns | - | - |
Typical Turn On Delay Time | 24 ns | - | - |
Part # Aliases | SP001529252 | SP001532204 | - |
Unit Weight | 0.035274 oz | - | - |