IRF6609

IRF6609TR1 vs IRF6609TR1PBF vs IRF6609TR1PBF.

 
PartNumberIRF6609TR1IRF6609TR1PBFIRF6609TR1PBF.
DescriptionMOSFET 20V N-CH 2.0 mOhm HEXFET 46nCMOSFET 20V N-CH HEXFET 2mOhms 46nC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSNY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MTDirectFET-MT-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current31 A31 A-
Rds On Drain Source Resistance2.6 mOhms2.6 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge46 nC46 nC-
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation89 W89 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Fall Time9.8 ns--
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time95 ns--
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time24 ns--
Part # AliasesSP001529252SP001532204-
Unit Weight0.035274 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6609TR1 MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
IRF6609TR1PBF MOSFET 20V N-CH HEXFET 2mOhms 46nC
IRF6609TRPBF MOSFET 20V N-CH HEXFET 2mOhms 46nC
IRF6609TR1PBF. Nuevo y original
Infineon Technologies
Infineon Technologies
IRF6609 MOSFET N-CH 20V 31A DIRECTFET
IRF6609TR1 MOSFET N-CH 20V 31A DIRECTFET
IRF6609TR1PBF MOSFET N-CH 20V 31A DIRECTFET
IRF6609TRPBF MOSFET 20V N-CH HEXFET 2mOhms 46nC
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