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| PartNumber | IRF630NPBF | IRF630NPBF , MM3Z6V8B | IRF630NPBF,F630N,IRF630N |
| Description | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9.3 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 82 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 4.9 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 7.9 ns | - | - |
| Part # Aliases | SP001564792 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF630NPBF | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | |
| IRF630NPBF | MOSFET N-CH 200V 9.3A TO-220AB | ||
| IRF630NPBF , MM3Z6V8B | Nuevo y original | ||
| IRF630NPBF,F630N,IRF630N | Nuevo y original | ||
| IRF630NPBF,IRF630N | Nuevo y original | ||
| IRF630NPBF,IRF630NSTRPBF | Nuevo y original | ||
| IRF630NPBF-CN | Nuevo y original | ||
| IRF630NPBFINFINEON-CSP2 | Nuevo y original |